FHP830B Datasheet and Replacement
Type Designator: FHP830B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 74 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 45 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: TO-220
FHP830B substitution
FHP830B Datasheet (PDF)
fhp830b.pdf
N N-CHANNEL MOSFET FHP830B MAIN CHARACTERISTICS FEATURES ID 5A Low gate charge VDSS 500V Crss ( 17pF) Low Crss (typical 17pF ) Rdson-typ @Vgs=10V 1.35 Fast switching Qg-typ 26nC 100% 100% avalanche tested dv/dt Improved dv/dt c
fhp830a.pdf
N N-CHANNEL MOSFET FHP830A MAIN CHARACTERISTICS FEATURES ID 5A Low gate charge VDSS 500V Crss ( 11.5pF) Low Crss (typical 11.5pF ) Rdson-typ @Vgs=10V 1.3 Fast switching Qg-typ 26nC 100% 100% avalanche tested dv/dt Improved dv/d
Datasheet: FHF7N60A , FHP7N65A , FHF7N65A , FHP7N65G , FHP80N07A , FHP80N07B , FHP80N08A , FHP830A , IRF840 , FHP840B , FHP8N60A , FHF8N60A , FHP8N60C , FHF8N60C , FHP8N65A , FHF8N65A , FHS100N09A .
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