All MOSFET. FHP830B Datasheet

 

FHP830B Datasheet and Replacement


   Type Designator: FHP830B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 74 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 45 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: TO-220
 

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FHP830B Datasheet (PDF)

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FHP830B

N N-CHANNEL MOSFET FHP830B MAIN CHARACTERISTICS FEATURES ID 5A Low gate charge VDSS 500V Crss ( 17pF) Low Crss (typical 17pF ) Rdson-typ @Vgs=10V 1.35 Fast switching Qg-typ 26nC 100% 100% avalanche tested dv/dt Improved dv/dt c

 8.1. Size:693K  feihonltd
 fhp830a.pdf pdf_icon

FHP830B

N N-CHANNEL MOSFET FHP830A MAIN CHARACTERISTICS FEATURES ID 5A Low gate charge VDSS 500V Crss ( 11.5pF) Low Crss (typical 11.5pF ) Rdson-typ @Vgs=10V 1.3 Fast switching Qg-typ 26nC 100% 100% avalanche tested dv/dt Improved dv/d

Datasheet: FHF7N60A , FHP7N65A , FHF7N65A , FHP7N65G , FHP80N07A , FHP80N07B , FHP80N08A , FHP830A , 20N60 , FHP840B , FHP8N60A , FHF8N60A , FHP8N60C , FHF8N60C , FHP8N65A , FHF8N65A , FHS100N09A .

History: SMK0270F | SQ3989EV | STFW40N60M2 | IRF6668PBF | SM1A23NSV | IRLR8113 | SQR50N03-06P

Keywords - FHP830B MOSFET datasheet

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