FHS90N08C MOSFET. Datasheet pdf. Equivalent
Type Designator: FHS90N08C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 115 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id|ⓘ - Maximum Drain Current: 90 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 60 nS
Cossⓘ - Output Capacitance: 270 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
Package: TO-263
FHS90N08C Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FHS90N08C Datasheet (PDF)
..1. Size:834K feihonltd
fhs90n08c.pdf
fhs90n08c.pdf
N N-CHANNEL MOSFET FHS90N08C MAIN CHARACTERISTICS FEATURES ID 90 A Low gate charge VDSS 80 V Crss ( 230pF) Low Crss (typical 230pF ) Rdson-typ @Vgs=10V 7.2m Fast switching Qg-typ 75nC 100% 100% avalanche tested dv/dt Improved dv
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