All MOSFET. FHT5N60D Datasheet

 

FHT5N60D Datasheet and Replacement


   Type Designator: FHT5N60D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 45 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.1 Ohm
   Package: TO-262
 

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FHT5N60D Datasheet (PDF)

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FHT5N60D

N N-CHANNEL MOSFET FHT5N60D MAIN CHARACTERISTICS FEATURES ID 5A Low gate charge VDSS 600V Crss ( 17pF) Low Crss (typical 17pF ) Rdson-typ @Vgs=10V 1.7 Fast switching Qg-typ 13.3nC 100% 100% avalanche tested dv/dt Improved dv/dt

Datasheet: FHS110N8F5A , FHS130N10A , FHS150N1F4A , FHS80N07A , FHD80N07A , FHS80N08B , FHD80N08B , FHS90N08C , IRFP250N , FHU100N03A , FHD100N03A , FHU100N03B , FHD100N03B , FHP100N03B , FHU100N03C , FHD100N03C , FHP100N03C .

History: 11N65TFS | BSS223PW

Keywords - FHT5N60D MOSFET datasheet

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