SSI4N60A Datasheet and Replacement
Type Designator: SSI4N60A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 16 nS
Cossⓘ - Output Capacitance: 63 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
Package: I2PAK
SSI4N60A substitution
SSI4N60A Datasheet (PDF)
ssi4n60b ssi4n60b ssw4n60b.pdf
November 2001SSW4N60B / SSI4N60B600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.0A, 600V, RDS(on) = 2.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 22 nC)planar, DMOS technology. Low Crss ( typical 14 pF)This advanced technology has been especially tailored to
Datasheet: SSH9N90A , SSI1N50A , SSI1N60A , SSI2N60A , SSI2N80A , SSI2N90A , SSI3N80A , SSI3N90A , 13N50 , SSI4N80A , SSI4N80AS , SSI4N90A , SSI4N90AS , SSI5N80A , SSI5N90A , SSI6N70A , SSI7N60A .
History: FHP15N60A | NCEP10N85AG | CPC3701C | WMP15N65C2 | HCD65R2K2 | SI4966DY | IRF5803
Keywords - SSI4N60A MOSFET datasheet
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History: FHP15N60A | NCEP10N85AG | CPC3701C | WMP15N65C2 | HCD65R2K2 | SI4966DY | IRF5803
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