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SSI4N60A Spec and Replacement


   Type Designator: SSI4N60A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 63 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
   Package: I2PAK

 SSI4N60A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SSI4N60A Specs

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SSI4N60A

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 7.1. Size:644K  fairchild semi
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SSI4N60A

November 2001 SSW4N60B / SSI4N60B 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4.0A, 600V, RDS(on) = 2.5 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 22 nC) planar, DMOS technology. Low Crss ( typical 14 pF) This advanced technology has been especially tailored to ... See More ⇒

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SSI4N60A

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SSI4N60A

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Detailed specifications: SSH9N90A , SSI1N50A , SSI1N60A , SSI2N60A , SSI2N80A , SSI2N90A , SSI3N80A , SSI3N90A , 5N60 , SSI4N80A , SSI4N80AS , SSI4N90A , SSI4N90AS , SSI5N80A , SSI5N90A , SSI6N70A , SSI7N60A .

History: SUP85N15-21 | TF3404

Keywords - SSI4N60A MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 
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