SSI4N60A Datasheet. Specs and Replacement

Type Designator: SSI4N60A  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 63 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm

Package: I2PAK

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SSI4N60A datasheet

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SSI4N60A

November 2001 SSW4N60B / SSI4N60B 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4.0A, 600V, RDS(on) = 2.5 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 22 nC) planar, DMOS technology. Low Crss ( typical 14 pF) This advanced technology has been especially tailored to ... See More ⇒

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Detailed specifications: SSH9N90A, SSI1N50A, SSI1N60A, SSI2N60A, SSI2N80A, SSI2N90A, SSI3N80A, SSI3N90A, TK10A60D, SSI4N80A, SSI4N80AS, SSI4N90A, SSI4N90AS, SSI5N80A, SSI5N90A, SSI6N70A, SSI7N60A

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.