All MOSFET. FHD50N06A Datasheet

 

FHD50N06A Datasheet and Replacement


   Type Designator: FHD50N06A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 39 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 40 nC
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: TO-252
 

 FHD50N06A substitution

   - MOSFET ⓘ Cross-Reference Search

 

FHD50N06A Datasheet (PDF)

 ..1. Size:299K  feihonltd
 fhu50n06a fhd50n06a.pdf pdf_icon

FHD50N06A

 6.1. Size:738K  feihonltd
 fhp50n06 fhu50n06d fhd50n06d.pdf pdf_icon

FHD50N06A

N N-CHANNEL MOSFET FHP50N06/FHU50N06D/FHD50N06D MAIN CHARACTERISTICS FEATURES ID 50 A Low gate charge VDSS 60 V Crss ( 130pF) Low Crss (typical 130pF ) Rdson-typ @Vgs=10V 8.5m Fast switching Qg-typ 40nC 100% 100% avalanche tested dv/dt

 9.1. Size:135K  china
 fhd50.pdf pdf_icon

FHD50N06A

FHD50 NPN B C D E F G PCM Tc=25 50 W ICM 10 A Tjm 175 Tstg -55~150 V(BR)CBO ICB=1mA 50 100 150 200 250 300 V V(BR)CEO ICE=1mA 50 100 150 200 250 300 V ICBO VCB=20V 1.0 mA ICEO VCE=20V 1.0 mA VBEsat 2.5 V IC=5A

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , SPP20N60C3 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: FQP8N80C | APT8065AVR

Keywords - FHD50N06A MOSFET datasheet

 FHD50N06A cross reference
 FHD50N06A equivalent finder
 FHD50N06A lookup
 FHD50N06A substitution
 FHD50N06A replacement

 

 
Back to Top

 


 
.