All MOSFET. BR8810MF Datasheet

 

BR8810MF Datasheet and Replacement


   Type Designator: BR8810MF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 328 nS
   Cossⓘ - Output Capacitance: 160 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: SOT23-6
 

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BR8810MF Datasheet (PDF)

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BR8810MF

BR8810MF Rev.E Oct.-2017 DATA SHEET / Descriptions SOT23-6 N MOS ESD N-channel Double MOSFET in a SOT23-6 Plastic Package. It is ESD protested. / Features RDS(on)advanced trench technology to provide excellent RDS(on), low gate charge. VD

Datasheet: FHU9540C , FHD9540C , BR13N50 , BR20N40 , BR2N7002K2 , BR40P03 , BR4953D , BR50P06 , 60N06 , BRA4N60 , BRCS10N15DP , BRCS120N02ZJ , BRCS120N03ZJ , BRCS139WS , BRCS20P04DP , BRCS20P06DP , BRCS2301AMA .

History: IXFT30N60X | APQ84SN06A

Keywords - BR8810MF MOSFET datasheet

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