All MOSFET. BRA4N60 Datasheet

 

BRA4N60 Datasheet and Replacement


   Type Designator: BRA4N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
   Package: TO-262
 

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BRA4N60 Datasheet (PDF)

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BRA4N60

BRA4N60 Rev.D Nov.-2015 DATA SHEET / Descriptions TO-262 N MOS N-CHANNEL MOSFET in a TO-262 Plastic Package.. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high efficienc

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BRA4N60

BRA4N65(BRCS4N65A) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-262 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package.. / Features ,, Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high

Datasheet: FHD9540C , BR13N50 , BR20N40 , BR2N7002K2 , BR40P03 , BR4953D , BR50P06 , BR8810MF , AON7403 , BRCS10N15DP , BRCS120N02ZJ , BRCS120N03ZJ , BRCS139WS , BRCS20P04DP , BRCS20P06DP , BRCS2301AMA , BRCS2301MA .

History: SSM6P05FU | NVMFS5C430N | SVS60R190DD4TR | CHM50N06PAGP | CHM634PAGP | DM8N65C | 2SK2460N

Keywords - BRA4N60 MOSFET datasheet

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