BRCS70N08IP MOSFET. Datasheet pdf. Equivalent
Type Designator: BRCS70N08IP
Marking Code: BR70N08
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 130 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 70 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 68 nS
Cossⓘ - Output Capacitance: 680 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: TO-251
BRCS70N08IP Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BRCS70N08IP Datasheet (PDF)
brcs70n08ip.pdf
BRCS70N08IP Rev.A Nov.-2017 DATA SHEET / Descriptions TO-251 N MOS N-CHANNEL MOSFET in a TO-251 Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high effici
brcs7002k2zk.pdf
BRCS7002K2ZK Rev.A Jul.-2020 DATA SHEET / Descriptions DFN1006-3L-0.5 N MOS N-Channel Enhancement Mode Field Effect Transistor in a DFN 1006-3L Plastic Package. / Features 2KV Sensitive gate trigger current and Low Holding current.ESD protect
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