BRCS80N03DP MOSFET. Datasheet pdf. Equivalent
Type Designator: BRCS80N03DP
Marking Code: BR80N03
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 90 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 80 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 30 nC
trⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 790 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
Package: TO-252
BRCS80N03DP Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BRCS80N03DP Datasheet (PDF)
..1. Size:647K blue-rocket-elect
brcs80n03dp.pdf
brcs80n03dp.pdf
BRCS80N03DP Rev.D Mar.-2020 DATA SHEET / Descriptions N TO-252 N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features Super high dense cell design for low RDS(on),Rugged and reliable,surface mount package. Halogen-free Product. / Applicati
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