BRCS80N03DP Datasheet and Replacement
Type Designator: BRCS80N03DP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 90 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 790 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
Package: TO-252
BRCS80N03DP substitution
BRCS80N03DP Datasheet (PDF)
brcs80n03dp.pdf

BRCS80N03DP Rev.D Mar.-2020 DATA SHEET / Descriptions N TO-252 N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features Super high dense cell design for low RDS(on),Rugged and reliable,surface mount package. Halogen-free Product. / Applicati
brcs800p06sc.pdf

BRCS800P06SC Rev.A May.-2023 DATA SHEET / Descriptions SOP-8 P P-CHANNEL MOSFET in a SOP-8 Plastic Package. / Features V =-60V DSI =-6A(V =20V) D GSRDS(ON)@-10V80mR(Typ.61mR) RDS(ON)@-4.5V120mR(Typ.77mR) HF Product. / Applications PWM De
Datasheet: BRCS4484SC , BRCS4606SC , BRCS4614SC , BRCS4953DMF , BRCS5N10MC , BRCS5P06MA , BRCS7002K2ZK , BRCS70N08IP , IRFB4227 , BRCS90P03RA , BRCS9435SC , BRCS9926SC , BRD100N03 , BRD15N10 , BRD30P06 , BRD4N70 , BRD50P06 .
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