All MOSFET. SSI7N60A Datasheet

 

SSI7N60A Datasheet and Replacement


   Type Designator: SSI7N60A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 147 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 130 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: I2PAK
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SSI7N60A Datasheet (PDF)

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SSI7N60A

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SSI7N60A

November 2001SSW7N60B / SSI7N60B600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7.0A, 600V, RDS(on) = 1.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 38 nC)planar, DMOS technology. Low Crss ( typical 23 pF)This advanced technology has been especially tailored to

Datasheet: SSI4N60A , SSI4N80A , SSI4N80AS , SSI4N90A , SSI4N90AS , SSI5N80A , SSI5N90A , SSI6N70A , AON7403 , SSP10N60A , SSP1N50A , SSP1N60A , SSP2N60A , SSP2N80A , SSP2N90A , SSP3N70 , SSP3N70A .

History: MCQ4503A | SM2F04NSU | BRCS200P03DP | MTN2N60I3 | IRFB3004GPBF | LKK47-06C5 | TSM4424CS

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