SSI7N60A PDF and Equivalents Search

 

SSI7N60A Specs and Replacement

Type Designator: SSI7N60A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 147 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19 nS

Cossⓘ - Output Capacitance: 130 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: I2PAK

SSI7N60A substitution

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SSI7N60A datasheet

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 ssi7n60a ssw7n60a.pdf pdf_icon

SSI7N60A

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 ssw7n60b ssi7n60b.pdf pdf_icon

SSI7N60A

November 2001 SSW7N60B / SSI7N60B 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7.0A, 600V, RDS(on) = 1.2 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 38 nC) planar, DMOS technology. Low Crss ( typical 23 pF) This advanced technology has been especially tailored to ... See More ⇒

Detailed specifications: SSI4N60A, SSI4N80A, SSI4N80AS, SSI4N90A, SSI4N90AS, SSI5N80A, SSI5N90A, SSI6N70A, STF13NM60N, SSP10N60A, SSP1N50A, SSP1N60A, SSP2N60A, SSP2N80A, SSP2N90A, SSP3N70, SSP3N70A

Keywords - SSI7N60A MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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