All MOSFET. SSI7N60A Datasheet

 

SSI7N60A Datasheet and Replacement


   Type Designator: SSI7N60A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 147 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 130 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: I2PAK
 

 SSI7N60A substitution

   - MOSFET ⓘ Cross-Reference Search

 

SSI7N60A Datasheet (PDF)

 ..1. Size:219K  1
 ssi7n60a ssw7n60a.pdf pdf_icon

SSI7N60A

 7.1. Size:661K  1
 ssw7n60b ssi7n60b.pdf pdf_icon

SSI7N60A

November 2001SSW7N60B / SSI7N60B600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7.0A, 600V, RDS(on) = 1.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 38 nC)planar, DMOS technology. Low Crss ( typical 23 pF)This advanced technology has been especially tailored to

Datasheet: SSI4N60A , SSI4N80A , SSI4N80AS , SSI4N90A , SSI4N90AS , SSI5N80A , SSI5N90A , SSI6N70A , IRF2807 , SSP10N60A , SSP1N50A , SSP1N60A , SSP2N60A , SSP2N80A , SSP2N90A , SSP3N70 , SSP3N70A .

Keywords - SSI7N60A MOSFET datasheet

 SSI7N60A cross reference
 SSI7N60A equivalent finder
 SSI7N60A lookup
 SSI7N60A substitution
 SSI7N60A replacement

 

 
Back to Top

 


 
.