All MOSFET. BRD15N10 Datasheet

 

BRD15N10 Datasheet and Replacement


   Type Designator: BRD15N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 39 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 15 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 2.5 nS
   Cossⓘ - Output Capacitance: 57 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
   Package: TO-252
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BRD15N10 Datasheet (PDF)

 ..1. Size:816K  blue-rocket-elect
 brd15n10.pdf pdf_icon

BRD15N10

BRD15N10 Rev.F Oct.-2018 DATA SHEET / Descriptions TO-252 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features R C DS(on) rssLow RDS(on),low gate charge, low Crss, fast switching. / Applications DC/DC

 9.1. Size:772K  blue-rocket-elect
 brd15p06.pdf pdf_icon

BRD15N10

BRD15P06(BRCS15P06D) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-252 P MOS P-CHANNEL MOSFET in a TO-252 Plastic Package. / Features R DS(on)Super high dense cell design for low RDS(on). / Applications DC/DC

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: 20N03L-TO252 | 2N6762JTXV

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