All MOSFET. BRD15N10 Datasheet

 

BRD15N10 Datasheet and Replacement


   Type Designator: BRD15N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 39 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 2.5 nS
   Cossⓘ - Output Capacitance: 57 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
   Package: TO-252
 

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BRD15N10 Datasheet (PDF)

 ..1. Size:816K  blue-rocket-elect
 brd15n10.pdf pdf_icon

BRD15N10

BRD15N10 Rev.F Oct.-2018 DATA SHEET / Descriptions TO-252 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features R C DS(on) rssLow RDS(on),low gate charge, low Crss, fast switching. / Applications DC/DC

 9.1. Size:772K  blue-rocket-elect
 brd15p06.pdf pdf_icon

BRD15N10

BRD15P06(BRCS15P06D) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-252 P MOS P-CHANNEL MOSFET in a TO-252 Plastic Package. / Features R DS(on)Super high dense cell design for low RDS(on). / Applications DC/DC

Datasheet: BRCS5P06MA , BRCS7002K2ZK , BRCS70N08IP , BRCS80N03DP , BRCS90P03RA , BRCS9435SC , BRCS9926SC , BRD100N03 , 2SK3878 , BRD30P06 , BRD4N70 , BRD50P06 , BRD70N08 , BRD840 , BRF5N65 , BRFL10N60 , BRFL10N65 .

History: TPC8119 | RFW2N06RLE | MSAFZ50N10A | BUZ216 | SSF3365 | IRFB4620 | LS4117

Keywords - BRD15N10 MOSFET datasheet

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