BRD30P06 MOSFET. Datasheet pdf. Equivalent
Type Designator: BRD30P06
Marking Code: BR30P06
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 30 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 48 nC
trⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 300 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
Package: TO-252
BRD30P06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BRD30P06 Datasheet (PDF)
brd30p06.pdf
BRD30P06 Rev.D May.-2016 DATA SHEET / Descriptions TO-252 P MOS P-CHANNEL MOSFET in a TO-252 Plastic Package. / Features VDS =- 60V,ID =-26A RDS(ON)
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
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MOSFET: SUN830I | SUN830F | SUN830DN | SUN830D | SUN82A20CI | SUN50A20CI | SUN09A40D | SUN05A50ZF | SUN05A50ZD | SUN05A25F | SRN1865FD | SRN1860FD | SRN1860F | SRN1665FD | SRN1660FD | SRN1660F