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BRD840 Specs and Replacement

Type Designator: BRD840

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 45 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 75 nS

Cossⓘ - Output Capacitance: 150 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm

Package: TO-252

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BRD840 datasheet

 ..1. Size:708K  blue-rocket-elect
 brd840.pdf pdf_icon

BRD840

BRD840 Rev.D May.-2016 DATA SHEET / Descriptions TO-252 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features , , Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high efficiency ... See More ⇒

Detailed specifications: BRCS9435SC, BRCS9926SC, BRD100N03, BRD15N10, BRD30P06, BRD4N70, BRD50P06, BRD70N08, AON7408, BRF5N65, BRFL10N60, BRFL10N65, BRFL12N60, BRFL12N65, BRFL7N60, BRFL7N65, BRFL7N80

Keywords - BRD840 MOSFET specs

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