3400H Specs and Replacement
Type Designator: 3400H
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 5.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 2.5 nS
Cossⓘ - Output Capacitance: 45 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
Package: SOT-23
3400H substitution
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3400H datasheet
3400h.pdf
3400H GOFORD Description D The 3400H uses advanced trench technology to provide excellent RDS(ON) and low gate charge.This device is suitable G for use as a load switch and PWM applications. S Genera Features Schematic diagram VDSS RDS(ON) RDS(ON) RDS(ON) ID @ (Typ) @ 10V 4.5V (Typ) @ 2.5V (Typ) m 27 m m 40 5.8 30V 30 A High Power and current handing cap... See More ⇒
Detailed specifications: BRFL7N65, BRFL7N80, BRFL8N60, IRFB3710, 2312, 06N06L, 18N10W, 2300F, AON7410, 3415A, 80N06-251, 8680A, G01N20R, G06N10, G08N03D2, G08N06S, G1006LE
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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