All MOSFET. G01N20R Datasheet

 

G01N20R Datasheet and Replacement


   Type Designator: G01N20R
   Marking Code: G01N20
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 12 nC
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.76 Ohm
   Package: TO-92
 

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G01N20R Datasheet (PDF)

 ..1. Size:2065K  goford
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G01N20R

GOFORDG01N20RDDescription The G01N20R uses advanced trench technology and Gdesign to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. SGeneral Features Schematic diagram VDSS R DS(ON) ID @ 10V (typ) 200V 1.34 2 A High density cell design for ultra low Rdson Fully characterized avalanche voltage and

Datasheet: 2312 , 06N06L , 18N10W , 2300F , 3400H , 3415A , 80N06-251 , 8680A , AON7506 , G06N10 , G08N03D2 , G08N06S , G1006LE , G1007 , G10N10A , G110N06K , G12P10K .

History: SI2312

Keywords - G01N20R MOSFET datasheet

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