G01N20R PDF and Equivalents Search

 

G01N20R Specs and Replacement

Type Designator: G01N20R

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 90 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.76 Ohm

Package: TO-92

G01N20R substitution

- MOSFET ⓘ Cross-Reference Search

 

G01N20R datasheet

 ..1. Size:2065K  goford
 g01n20r.pdf pdf_icon

G01N20R

GOFORD G01N20R D Description The G01N20R uses advanced trench technology and G design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. S General Features Schematic diagram VDSS R DS(ON) ID @ 10V (typ) 200V 1.34 2 A High density cell design for ultra low Rdson Fully characterized avalanche voltage and... See More ⇒

Detailed specifications: 2312, 06N06L, 18N10W, 2300F, 3400H, 3415A, 80N06-251, 8680A, IRFB3607, G06N10, G08N03D2, G08N06S, G1006LE, G1007, G10N10A, G110N06K, G12P10K

Keywords - G01N20R MOSFET specs

 G01N20R cross reference

 G01N20R equivalent finder

 G01N20R pdf lookup

 G01N20R substitution

 G01N20R replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

↑ Back to Top
.