All MOSFET. G06N10 Datasheet

 

G06N10 Datasheet and Replacement


   Type Designator: G06N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 22 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.24 Ohm
   Package: TO-252
      - MOSFET Cross-Reference Search

 

G06N10 Datasheet (PDF)

 ..1. Size:1708K  goford
 g06n10.pdf pdf_icon

G06N10

GOFORDG06N10Description DThe G06N10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It Gcan be used in a wide variety of applications. General Features SSchematic diagram High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Excellent package for good heat dissipation A

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: IRFR130A | NDT4N65P | FQU13N10 | SFB053N100C3 | NTMFS4837NHT1G | SWMI4N65D | BMS3003

Keywords - G06N10 MOSFET datasheet

 G06N10 cross reference
 G06N10 equivalent finder
 G06N10 lookup
 G06N10 substitution
 G06N10 replacement

 

 
Back to Top

 


 
.