All MOSFET. G06N10 Datasheet

 

G06N10 MOSFET. Datasheet pdf. Equivalent


   Type Designator: G06N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 5.2 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 22 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.24 Ohm
   Package: TO-252

 G06N10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

G06N10 Datasheet (PDF)

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 g06n10.pdf

G06N10 G06N10

GOFORDG06N10Description DThe G06N10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It Gcan be used in a wide variety of applications. General Features SSchematic diagram High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Excellent package for good heat dissipation A

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: GMS2302 | WPM3022

 

 
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