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G06N10 Specs and Replacement

Type Designator: G06N10

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 22 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.24 Ohm

Package: TO-252

G06N10 substitution

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G06N10 datasheet

 ..1. Size:1708K  goford
 g06n10.pdf pdf_icon

G06N10

GOFORD G06N10 Description D The G06N10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It G can be used in a wide variety of applications. General Features S Schematic diagram High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Excellent package for good heat dissipation A... See More ⇒

Detailed specifications: 06N06L, 18N10W, 2300F, 3400H, 3415A, 80N06-251, 8680A, G01N20R, AON6380, G08N03D2, G08N06S, G1006LE, G1007, G10N10A, G110N06K, G12P10K, G13N04

Keywords - G06N10 MOSFET specs

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