All MOSFET. G06N10 Datasheet

 

G06N10 Datasheet and Replacement


   Type Designator: G06N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 22 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.24 Ohm
   Package: TO-252
 

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G06N10 Datasheet (PDF)

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G06N10

GOFORDG06N10Description DThe G06N10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It Gcan be used in a wide variety of applications. General Features SSchematic diagram High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Excellent package for good heat dissipation A

Datasheet: 06N06L , 18N10W , 2300F , 3400H , 3415A , 80N06-251 , 8680A , G01N20R , IRLZ44N , G08N03D2 , G08N06S , G1006LE , G1007 , G10N10A , G110N06K , G12P10K , G13N04 .

History: STD1HNC60T4 | NCEP10N85AG | CPC3701C | WMP15N65C2 | HCD65R2K2 | SI4966DY | IRF5803

Keywords - G06N10 MOSFET datasheet

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