All MOSFET. G08N03D2 Datasheet

 

G08N03D2 Datasheet and Replacement


   Type Designator: G08N03D2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 17 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 3.5 nS
   Cossⓘ - Output Capacitance: 219 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: DFN2X2
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G08N03D2 Datasheet (PDF)

 ..1. Size:585K  goford
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G08N03D2

GOFORD G08N03D2N-Channel Enhancement Mode Power MOSFETDescriptionThe G08N03D2 uses advanced trench technology to provideexcellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.General FeaturesSchematic diagram VDS 30V ID (at VGS = 10V) 8A RDS(ON) (at VGS = 10V)

 9.1. Size:2141K  goford
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G08N03D2

G08N06SGOFORDDescription The G08N06S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDSS RDS(ON) RDS(ON) ID @ 10V (Typ) @ 4.5V (Typ)60V 24 m 30m 6 A High density cell design for ultra low Rdson Fully characterized avalanche voltage and curre

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: SPD04N60S5 | DM12N65C | SM6A12NSFP | AP6679GI-HF | FCPF7N60YDTU | NTD4855N-1G

Keywords - G08N03D2 MOSFET datasheet

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