G08N03D2 MOSFET Datasheet: N-Ch, 30V, 8A. Full specification with pinout and replacement list

G08N03D2 Specs and Replacement

Type Designator: G08N03D2

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 17 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.5 nS

Cossⓘ - Output Capacitance: 219 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: DFN2X2

G08N03D2 substitution

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G08N03D2 datasheet

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GOFORD G08N03D2 N-Channel Enhancement Mode Power MOSFET Description The G08N03D2 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features Schematic diagram VDS 30V ID (at VGS = 10V) 8A RDS(ON) (at VGS = 10V) ... See More ⇒

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G08N06S GOFORD Description The G08N06S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDSS RDS(ON) RDS(ON) ID @ 10V (Typ) @ 4.5V (Typ) 60V 24 m 30m 6 A High density cell design for ultra low Rdson Fully characterized avalanche voltage and curre... See More ⇒

Detailed specifications: 18N10W, 2300F, 3400H, 3415A, 80N06-251, 8680A, G01N20R, G06N10, IRF530, G08N06S, G1006LE, G1007, G10N10A, G110N06K, G12P10K, G13N04, G15N10C