All MOSFET. G08N03D2 Datasheet

 

G08N03D2 MOSFET. Datasheet pdf. Equivalent


   Type Designator: G08N03D2
   Marking Code: G08N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 17 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 15 nC
   trⓘ - Rise Time: 3.5 nS
   Cossⓘ - Output Capacitance: 219 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: DFN2X2

 G08N03D2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

G08N03D2 Datasheet (PDF)

 ..1. Size:585K  goford
 g08n03d2.pdf

G08N03D2 G08N03D2

GOFORD G08N03D2N-Channel Enhancement Mode Power MOSFETDescriptionThe G08N03D2 uses advanced trench technology to provideexcellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.General FeaturesSchematic diagram VDS 30V ID (at VGS = 10V) 8A RDS(ON) (at VGS = 10V)

 9.1. Size:2141K  goford
 g08n06s.pdf

G08N03D2 G08N03D2

G08N06SGOFORDDescription The G08N06S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDSS RDS(ON) RDS(ON) ID @ 10V (Typ) @ 4.5V (Typ)60V 24 m 30m 6 A High density cell design for ultra low Rdson Fully characterized avalanche voltage and curre

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: SRC65R085BS

 

 
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