All MOSFET. G08N06S Datasheet

 

G08N06S Datasheet and Replacement


   Type Designator: G08N06S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: SOP-8
 

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G08N06S Datasheet (PDF)

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G08N06S

G08N06SGOFORDDescription The G08N06S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDSS RDS(ON) RDS(ON) ID @ 10V (Typ) @ 4.5V (Typ)60V 24 m 30m 6 A High density cell design for ultra low Rdson Fully characterized avalanche voltage and curre

 9.1. Size:585K  goford
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G08N06S

GOFORD G08N03D2N-Channel Enhancement Mode Power MOSFETDescriptionThe G08N03D2 uses advanced trench technology to provideexcellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.General FeaturesSchematic diagram VDS 30V ID (at VGS = 10V) 8A RDS(ON) (at VGS = 10V)

Datasheet: 2300F , 3400H , 3415A , 80N06-251 , 8680A , G01N20R , G06N10 , G08N03D2 , IRLB4132 , G1006LE , G1007 , G10N10A , G110N06K , G12P10K , G13N04 , G15N10C , G16P03 .

History: R6015ANJ | NCE60ND45G | PTP88N07 | FDMC86248 | RJK0214DPA | MSW10N80 | IRLB8748PBF

Keywords - G08N06S MOSFET datasheet

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