G1006LE Datasheet and Replacement. Cross Reference Search

G1006LE Datasheet (PDF)

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GOFORD G1006LEN-Channel Trench MOSFETDescriptionThis Product uses advanced trench technologyMOSFETs to provide excellent RDS(ON) and low gatecharge. The complementary MOSFETs may be used toform a level shifted high side switch, and for a host ofother applications.Schematic diagramGeneral Features VDS 100V ID (at VGS = 10V) 3AG1006 RDS(ON) (at VGS = 10V)

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GOFORDG1006DDescription The G1006 uses advanced trench technology and Gdesign to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features SSchematic diagram VDSS RDS(ON) ID @10V (typ)6Am100V 110 High density cell design for ultra low Rdson Fully characterized avalanche voltage and curren

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GOFORDG1006ADDescription The G1006A uses advanced trench technology and Gdesign to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. It is ESD protected. It is ESD protected.It is ESD protected.SGeneral Features Schematic diagram VDS = 100V,ID = 6A R

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