G1006LE MOSFET Datasheet: N-Ch, 100V, 3A. Full specification with pinout and replacement list

G1006LE Specs and Replacement

Type Designator: G1006LE

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 35 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm

Package: SOT-23

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G1006LE datasheet

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GOFORD G1006LE N-Channel Trench MOSFET Description This Product uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Schematic diagram General Features VDS 100V ID (at VGS = 10V) 3A G1006 RDS(ON) (at VGS = 10V) ... See More ⇒

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GOFORD G1006 D Description The G1006 uses advanced trench technology and G design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features S Schematic diagram VDSS RDS(ON) ID @ 10V (typ) 6A m 100V 110 High density cell design for ultra low Rdson Fully characterized avalanche voltage and curren... See More ⇒

9.2. Size:2091K goford
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GOFORD G1006A D Description The G1006A uses advanced trench technology and G design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. It is ESD protected. It is ESD protected. It is ESD protected. S General Features Schematic diagram VDS = 100V,ID = 6A R ... See More ⇒

Detailed specifications: 3400H, 3415A, 80N06-251, 8680A, G01N20R, G06N10, G08N03D2, G08N06S, NCEP15T14, G1007, G10N10A, G110N06K, G12P10K, G13N04, G15N10C, G16P03, G16P03S