G1006LE - аналоги, параметры транзистора - Справочник транзисторов

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GOFORD G1006LE N-Channel Trench MOSFET Description This Product uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Schematic diagram General Features VDS 100V ID (at VGS = 10V) 3A G1006 RDS(ON) (at VGS = 10V)

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GOFORD G1006 D Description The G1006 uses advanced trench technology and G design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features S Schematic diagram VDSS RDS(ON) ID @ 10V (typ) 6A m 100V 110 High density cell design for ultra low Rdson Fully characterized avalanche voltage and curren

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GOFORD G1006A D Description The G1006A uses advanced trench technology and G design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. It is ESD protected. It is ESD protected. It is ESD protected. S General Features Schematic diagram VDS = 100V,ID = 6A R

Другие MOSFET... 3400H , 3415A , 80N06-251 , 8680A , G01N20R , G06N10 , G08N03D2 , G08N06S , NCEP15T14 , G1007 , G10N10A , G110N06K , G12P10K , G13N04 , G15N10C , G16P03 , G16P03S .