All MOSFET. G1007 Datasheet

 

G1007 Datasheet and Replacement


   Type Designator: G1007
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 28 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
   Package: SOP-8
 

 G1007 substitution

   - MOSFET ⓘ Cross-Reference Search

 

G1007 Datasheet (PDF)

 ..1. Size:1325K  goford
 g1007.pdf pdf_icon

G1007

GOFORDG1007.General Description The G1007. combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for power switching application and LED backlighting. Features RDS(ON) VDSS ID Schematic Diagram@10V (typ) 100V 7A 70m Ultra Low On-Resistance High UIS and UIS 100% Test Application

Datasheet: 3415A , 80N06-251 , 8680A , G01N20R , G06N10 , G08N03D2 , G08N06S , G1006LE , IRFP250 , G10N10A , G110N06K , G12P10K , G13N04 , G15N10C , G16P03 , G16P03S , G18N20K .

History: HFS7N80 | NP70N04MUG | IXCY01N90E | STP9N80K5 | HSM4606 | IPD60R3K4CE | KI2310DS

Keywords - G1007 MOSFET datasheet

 G1007 cross reference
 G1007 equivalent finder
 G1007 lookup
 G1007 substitution
 G1007 replacement

 

 
Back to Top

 


 
.