G1007 Specs and Replacement
Type Designator: G1007
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 28 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 3 nS
Cossⓘ - Output Capacitance: 120 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
Package: SOP-8
G1007 substitution
- MOSFET ⓘ Cross-Reference Search
G1007 datasheet
g1007.pdf
GOFORD G1007. General Description The G1007. combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for power switching application and LED backlighting. Features RDS(ON) VDSS ID Schematic Diagram @10V (typ) 100V 7A 70 m Ultra Low On-Resistance High UIS and UIS 100% Test Application ... See More ⇒
Detailed specifications: 3415A, 80N06-251, 8680A, G01N20R, G06N10, G08N03D2, G08N06S, G1006LE, AON7506, G10N10A, G110N06K, G12P10K, G13N04, G15N10C, G16P03, G16P03S, G18N20K
Keywords - G1007 MOSFET specs
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