G1007 MOSFET. Datasheet pdf. Equivalent
Type Designator: G1007
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 28 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.6 V
|Id|ⓘ - Maximum Drain Current: 7 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 11 nC
trⓘ - Rise Time: 3 nS
Cossⓘ - Output Capacitance: 120 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
Package: SOP-8
G1007 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
G1007 Datasheet (PDF)
..1. Size:1325K goford
g1007.pdf
g1007.pdf
GOFORDG1007.General Description The G1007. combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for power switching application and LED backlighting. Features RDS(ON) VDSS ID Schematic Diagram@10V (typ) 100V 7A 70m Ultra Low On-Resistance High UIS and UIS 100% Test Application
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
