G12P10K Specs and Replacement
Type Designator: G12P10K
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 260 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
Package: TO-252
G12P10K substitution
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G12P10K datasheet
g12p10k.pdf
GOFORD G12P10K P-Channel Trench MOSFET Description The G12P10K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS -100V Schematic diagram - ID (at VGS = 10V) -12A - RDS(ON) (at VGS = 10V) ... See More ⇒
Detailed specifications: G01N20R, G06N10, G08N03D2, G08N06S, G1006LE, G1007, G10N10A, G110N06K, TK10A60D, G13N04, G15N10C, G16P03, G16P03S, G18N20K, G1NP02ELL, G2003A, G20N06J
Keywords - G12P10K MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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