All MOSFET. G12P10K Datasheet

 

G12P10K Datasheet and Replacement


   Type Designator: G12P10K
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 260 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
   Package: TO-252
 

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G12P10K Datasheet (PDF)

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G12P10K

GOFORD G12P10KP-Channel Trench MOSFETDescription The G12P10K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS -100VSchematic diagram - ID (at VGS = 10V) -12A-RDS(ON) (at VGS = 10V)

Datasheet: G01N20R , G06N10 , G08N03D2 , G08N06S , G1006LE , G1007 , G10N10A , G110N06K , IRFZ24N , G13N04 , G15N10C , G16P03 , G16P03S , G18N20K , G1NP02ELL , G2003A , G20N06J .

History: CS10N80F | CS2N60A4H

Keywords - G12P10K MOSFET datasheet

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