G13N04 Specs and Replacement
Type Designator: G13N04
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 13 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 17.2 nS
Cossⓘ - Output Capacitance: 209 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: SOP-8
G13N04 substitution
- MOSFET ⓘ Cross-Reference Search
G13N04 datasheet
g13n04.pdf
GOFORD G13N04 Description The G13N04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features Schematic diagram VDSS RDS(ON) RDS(ON) ID @ (typ) @ 4.5V 10V (typ) m m 40V 13 10 13A High density cell design for ultra low Rdson Marking and pin Assignment Full... See More ⇒
Detailed specifications: G06N10, G08N03D2, G08N06S, G1006LE, G1007, G10N10A, G110N06K, G12P10K, AO4407, G15N10C, G16P03, G16P03S, G18N20K, G1NP02ELL, G2003A, G20N06J, G3035-23
Keywords - G13N04 MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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