All MOSFET. G13N04 Datasheet

 

G13N04 Datasheet and Replacement


   Type Designator: G13N04
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 13 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 17.2 nS
   Cossⓘ - Output Capacitance: 209 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: SOP-8
 

 G13N04 substitution

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G13N04 Datasheet (PDF)

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G13N04

GOFORDG13N04Description The G13N04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features Schematic diagram VDSS RDS(ON) RDS(ON) ID @ (typ) @4.5V 10V (typ)m m40V 13 10 13A High density cell design for ultra low Rdson Marking and pin Assignment Full

Datasheet: G06N10 , G08N03D2 , G08N06S , G1006LE , G1007 , G10N10A , G110N06K , G12P10K , IRFP450 , G15N10C , G16P03 , G16P03S , G18N20K , G1NP02ELL , G2003A , G20N06J , G3035-23 .

History: VBA1615 | WMK030N06HG4 | MEM2301XG-N | WMN13N65EM | WMO07N70C4 | STD2NK90Z | SI2343CDS

Keywords - G13N04 MOSFET datasheet

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