All MOSFET. G1NP02ELL Datasheet

 

G1NP02ELL MOSFET. Datasheet pdf. Equivalent


   Type Designator: G1NP02ELL
   Marking Code: G1NP02
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 1.12 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 1.36 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 750 nC
   trⓘ - Rise Time: 4.8 nS
   Cossⓘ - Output Capacitance: 15 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.37 Ohm
   Package: SOT-23-6

 G1NP02ELL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

G1NP02ELL Datasheet (PDF)

 ..1. Size:898K  goford
 g1np02ell.pdf

G1NP02ELL G1NP02ELL

GOFORD G1NP02ELLN and P Channel Enhancement Mode Power MOSFETDescriptionThis Product uses advanced trench technologyMOSFETs to provide excellent RDS(ON) and low gatecharge. The complementary MOSFETs may be used toform a level shifted high side switch, and for a host ofother applications.General FeaturesSchematic diagram NMOS VDS 20V ID (at VGS = 10V) 1.36A

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: AFN2324A | GSM3025S

 

 
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