All MOSFET. G1NP02ELL Datasheet

 

G1NP02ELL Datasheet and Replacement


   Type Designator: G1NP02ELL
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.12 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 1.36 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4.8 nS
   Cossⓘ - Output Capacitance: 15 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.37 Ohm
   Package: SOT-23-6
 

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G1NP02ELL Datasheet (PDF)

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G1NP02ELL

GOFORD G1NP02ELLN and P Channel Enhancement Mode Power MOSFETDescriptionThis Product uses advanced trench technologyMOSFETs to provide excellent RDS(ON) and low gatecharge. The complementary MOSFETs may be used toform a level shifted high side switch, and for a host ofother applications.General FeaturesSchematic diagram NMOS VDS 20V ID (at VGS = 10V) 1.36A

Datasheet: G10N10A , G110N06K , G12P10K , G13N04 , G15N10C , G16P03 , G16P03S , G18N20K , 5N65 , G2003A , G20N06J , G3035-23 , G30N03A , G30N03D3 , G30N04D3 , G30N20K , G30N20T .

History: 2SK3082S

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