All MOSFET. G3035-23 Datasheet

 

G3035-23 Datasheet and Replacement


   Type Designator: G3035-23
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4.5 nS
   Cossⓘ - Output Capacitance: 105 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
   Package: SOT-23
 

 G3035-23 substitution

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G3035-23 Datasheet (PDF)

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G3035-23

GOFORDG3035-23Description DThe G3035-23 uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load Gswitch or in PWM applications. General Features SSchematic diagram VDSS RDS(ON) RDS(ON) ID @ (Typ) @-4.5V -10V (Typ)m m -5-30V 58 40 A High power and current handing capability Lead free product is ac

Datasheet: G13N04 , G15N10C , G16P03 , G16P03S , G18N20K , G1NP02ELL , G2003A , G20N06J , RFP50N06 , G30N03A , G30N03D3 , G30N04D3 , G30N20K , G30N20T , G30N20F , G33N03D3 , G48N03D3 .

History: S15H11RN | 2SK3650-01L

Keywords - G3035-23 MOSFET datasheet

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