G3035-23 MOSFET Datasheet: P-Ch, 30V, 5A. Full specification with pinout and replacement list

G3035-23 Specs and Replacement

Type Designator: G3035-23

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4.5 nS

Cossⓘ - Output Capacitance: 105 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm

Package: SOT-23

G3035-23 substitution

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G3035-23 datasheet

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GOFORD G3035-23 Description D The G3035-23 uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load G switch or in PWM applications. General Features S Schematic diagram VDSS RDS(ON) RDS(ON) ID @ (Typ) @ -4.5V -10V (Typ) m m -5 -30V 58 40 A High power and current handing capability Lead free product is ac... See More ⇒

Detailed specifications: G13N04, G15N10C, G16P03, G16P03S, G18N20K, G1NP02ELL, G2003A, G20N06J, RFP50N06, G30N03A, G30N03D3, G30N04D3, G30N20K, G30N20T, G30N20F, G33N03D3, G48N03D3