All MOSFET. G30N20F Datasheet

 

G30N20F Datasheet and Replacement


   Type Designator: G30N20F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 163 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
   Package: TO-220F
 

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G30N20F Datasheet (PDF)

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G30N20F

GOFORDG30N20Description The G30N20 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDSS RDS(ON) ID @10V (Typ)200V 62m 30A Schematic diagram High density cell design for ultra low Rdson Fully characterized avalanche voltage and current

Datasheet: G2003A , G20N06J , G3035-23 , G30N03A , G30N03D3 , G30N04D3 , G30N20K , G30N20T , IRFB31N20D , G33N03D3 , G48N03D3 , G4N60K , G50N03A , G50N03K , G5N50T , G5N50F , G5N50J .

History: FMV05N60E

Keywords - G30N20F MOSFET datasheet

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