G30N20F PDF and Equivalents Search

 

G30N20F Specs and Replacement

Type Designator: G30N20F

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 60 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 163 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm

Package: TO-220F

G30N20F substitution

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G30N20F datasheet

 ..1. Size:4018K  goford
 g30n20k g30n20t g30n20f.pdf pdf_icon

G30N20F

GOFORD G30N20 Description The G30N20 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDSS RDS(ON) ID @ 10V (Typ) 200V 62m 30A Schematic diagram High density cell design for ultra low Rdson Fully characterized avalanche voltage and current ... See More ⇒

Detailed specifications: G2003A, G20N06J, G3035-23, G30N03A, G30N03D3, G30N04D3, G30N20K, G30N20T, IRF2807, G33N03D3, G48N03D3, G4N60K, G50N03A, G50N03K, G5N50T, G5N50F, G5N50J

Keywords - G30N20F MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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