G33N03D3 Datasheet. Specs and Replacement
Type Designator: G33N03D3 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 20 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 33 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 142 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: DFN3.3X3.3-8L
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G33N03D3 substitution
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G33N03D3 datasheet
g33n03d3.pdf
GOFORD G33N03D3 N-Channel Trench MOSFET Description The G33N03D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features Schematic Diagram VDS 30V ID (at VGS = 10V) 33A RDS(ON) (at VGS = 10V) ... See More ⇒
g33n03d3.pdf
GOFORD G33N03D3 N-Channel Trench MOSFET Description The G33N03D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features Schematic Diagram VDS 30V ID (at VGS = 10V) 33A RDS(ON) (at VGS = 10V) ... See More ⇒
Detailed specifications: G20N06J, G3035-23, G30N03A, G30N03D3, G30N04D3, G30N20K, G30N20T, G30N20F, HY1906P, G48N03D3, G4N60K, G50N03A, G50N03K, G5N50T, G5N50F, G5N50J, G5N50K
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