All MOSFET. G33N03D3 Datasheet

 

G33N03D3 Datasheet and Replacement


   Type Designator: G33N03D3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 33 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 142 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: DFN3.3X3.3-8L
 

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G33N03D3 Datasheet (PDF)

 ..1. Size:566K  1
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G33N03D3

GOFORDG33N03D3N-Channel Trench MOSFETDescriptionThe G33N03D3 uses advanced trench technology to provideexcellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.General FeaturesSchematic Diagram VDS 30V ID (at VGS = 10V) 33A RDS(ON) (at VGS = 10V)

 ..2. Size:566K  goford
 g33n03d3.pdf pdf_icon

G33N03D3

GOFORDG33N03D3N-Channel Trench MOSFETDescriptionThe G33N03D3 uses advanced trench technology to provideexcellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.General FeaturesSchematic Diagram VDS 30V ID (at VGS = 10V) 33A RDS(ON) (at VGS = 10V)

Datasheet: G20N06J , G3035-23 , G30N03A , G30N03D3 , G30N04D3 , G30N20K , G30N20T , G30N20F , IRFZ24N , G48N03D3 , G4N60K , G50N03A , G50N03K , G5N50T , G5N50F , G5N50J , G5N50K .

History: STD13N65M2 | FDB86366F085

Keywords - G33N03D3 MOSFET datasheet

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