G33N03D3 Datasheet and Replacement
Type Designator: G33N03D3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 20 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 33 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 142 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: DFN3.3X3.3-8L
G33N03D3 substitution
G33N03D3 Datasheet (PDF)
g33n03d3.pdf
GOFORDG33N03D3N-Channel Trench MOSFETDescriptionThe G33N03D3 uses advanced trench technology to provideexcellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.General FeaturesSchematic Diagram VDS 30V ID (at VGS = 10V) 33A RDS(ON) (at VGS = 10V)
g33n03d3.pdf
GOFORDG33N03D3N-Channel Trench MOSFETDescriptionThe G33N03D3 uses advanced trench technology to provideexcellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.General FeaturesSchematic Diagram VDS 30V ID (at VGS = 10V) 33A RDS(ON) (at VGS = 10V)
Datasheet: G20N06J , G3035-23 , G30N03A , G30N03D3 , G30N04D3 , G30N20K , G30N20T , G30N20F , IRFZ24N , G48N03D3 , G4N60K , G50N03A , G50N03K , G5N50T , G5N50F , G5N50J , G5N50K .
History: ZXMD63P02X
Keywords - G33N03D3 MOSFET datasheet
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History: ZXMD63P02X
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