G33N03D3 Datasheet. Specs and Replacement

Type Designator: G33N03D3  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 20 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 33 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 142 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm

Package: DFN3.3X3.3-8L

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G33N03D3 datasheet

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G33N03D3

GOFORD G33N03D3 N-Channel Trench MOSFET Description The G33N03D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features Schematic Diagram VDS 30V ID (at VGS = 10V) 33A RDS(ON) (at VGS = 10V) ... See More ⇒

 ..2. Size:566K  goford
g33n03d3.pdf pdf_icon

G33N03D3

GOFORD G33N03D3 N-Channel Trench MOSFET Description The G33N03D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features Schematic Diagram VDS 30V ID (at VGS = 10V) 33A RDS(ON) (at VGS = 10V) ... See More ⇒

Detailed specifications: G20N06J, G3035-23, G30N03A, G30N03D3, G30N04D3, G30N20K, G30N20T, G30N20F, HY1906P, G48N03D3, G4N60K, G50N03A, G50N03K, G5N50T, G5N50F, G5N50J, G5N50K

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.