G33N03D3 PDF Specs and Replacement
Type Designator: G33N03D3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 20 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 33 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 142 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: DFN3.3X3.3-8L
G33N03D3 substitution
G33N03D3 PDF Specs
g33n03d3.pdf
GOFORD G33N03D3 N-Channel Trench MOSFET Description The G33N03D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features Schematic Diagram VDS 30V ID (at VGS = 10V) 33A RDS(ON) (at VGS = 10V) ... See More ⇒
g33n03d3.pdf
GOFORD G33N03D3 N-Channel Trench MOSFET Description The G33N03D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features Schematic Diagram VDS 30V ID (at VGS = 10V) 33A RDS(ON) (at VGS = 10V) ... See More ⇒
Detailed specifications: G20N06J , G3035-23 , G30N03A , G30N03D3 , G30N04D3 , G30N20K , G30N20T , G30N20F , STF13NM60N , G48N03D3 , G4N60K , G50N03A , G50N03K , G5N50T , G5N50F , G5N50J , G5N50K .
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
