All MOSFET. G48N03D3 Datasheet

 

G48N03D3 Datasheet and Replacement


   Type Designator: G48N03D3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 48 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 36 nS
   Cossⓘ - Output Capacitance: 320 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
   Package: DFN3X3-8L
 
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G48N03D3 Datasheet (PDF)

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G48N03D3

GOFORDG48N03D3Description General Features VDSS RDS(ON) RDS(ON) ID @10V (Typ) @4.5V (Typ)30V 4.2m 7.1m 48A Schematic diagram Advanced Trench Technology Provide Excellent R and Low Gate Charge DS(ON) RoHS CompliantG48N03Application Load Switch PWM Application Power management Marking and pin assignment DFN3* 3-8LOr

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