All MOSFET. G5N50J Datasheet

 

G5N50J Datasheet and Replacement


   Type Designator: G5N50J
   Marking Code: G5N50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 13.4 nC
   tr ⓘ - Rise Time: 11.5 nS
   Cossⓘ - Output Capacitance: 58.8 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: TO-251
 

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G5N50J Datasheet (PDF)

 ..1. Size:1635K  goford
 g5n50t g5n50f g5n50j g5n50k.pdf pdf_icon

G5N50J

G5N50KGOFORDDescription 500V N-CHANNEL ENHANCEMENT MODE POWER MOSFET ApplicationFeaturesR DS(ON)(Max)IVDSS D .@ VGS = 10V DC Motor Control and Class D Amplifier 500V 5A Uninterruptible Power Supply (UPS) 1.4 Fast switching HID 100% avalanche tested Improved dv/dt capability RoHS Compliant & Halogen-Free Package Ordering Informa

 9.1. Size:1205K  lonten
 lnc5n50 lnd5n50 lng5n50 lnh5n50.pdf pdf_icon

G5N50J

LNC5N50\LND5N50\LNG5N50\LNH5N50Lonten N-channel 500V, 5A Power MOSFETDescription Product SummaryThe Power MOSFET is fabricated using the V 500VDSSadvanced planar VDMOS technology. The I 5ADresulting device has low conduction resistance, R 1.6DS(on),maxsuperior switching performance and high avalanche Q 12.8 nCg,typenergy.Features Low RDS(on) Low gate charge

Datasheet: G30N20F , G33N03D3 , G48N03D3 , G4N60K , G50N03A , G50N03K , G5N50T , G5N50F , IRF730 , G5N50K , G6P06 , G7P03L , G86N06K , G90N04 , GC11N65T , GC11N65F , GC11N65K .

Keywords - G5N50J MOSFET datasheet

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