All MOSFET. G6P06 Datasheet

 

G6P06 Datasheet and Replacement


   Type Designator: G6P06
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.096 Ohm
   Package: SOP-8
 

 G6P06 substitution

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G6P06 Datasheet (PDF)

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G6P06

GOFORDG6P06DDescriptionThe G6P06 uses advanced trench technology and design Gto provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.SSchematic diagram General FeaturesVDSS RDS(ON) ) RDS(ON ID @-10V (Typ) @ -4.5V (Typ)-60V 80m 100m -4AG6P06Super high dense cell designAdvanced trench process techno

Datasheet: G48N03D3 , G4N60K , G50N03A , G50N03K , G5N50T , G5N50F , G5N50J , G5N50K , NCEP15T14 , G7P03L , G86N06K , G90N04 , GC11N65T , GC11N65F , GC11N65K , GC11N70K , GC11N70T .

History: AP0803GMP-HF | DM4N65E | SI9933CDY | JMTP3010D | IXTH10N100 | B50N06 | FDZ65T300D8G

Keywords - G6P06 MOSFET datasheet

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