All MOSFET. G6P06 Datasheet

 

G6P06 MOSFET. Datasheet pdf. Equivalent


   Type Designator: G6P06
   Marking Code: G6P06
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 24 nC
   trⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.096 Ohm
   Package: SOP-8

 G6P06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

G6P06 Datasheet (PDF)

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 g6p06.pdf

G6P06 G6P06

GOFORDG6P06DDescriptionThe G6P06 uses advanced trench technology and design Gto provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.SSchematic diagram General FeaturesVDSS RDS(ON) ) RDS(ON ID @-10V (Typ) @ -4.5V (Typ)-60V 80m 100m -4AG6P06Super high dense cell designAdvanced trench process techno

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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