G6P06 PDF and Equivalents Search

 

G6P06 Specs and Replacement

Type Designator: G6P06

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 70 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.096 Ohm

Package: SOP-8

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G6P06 datasheet

 ..1. Size:1423K  goford
 g6p06.pdf pdf_icon

G6P06

GOFORD G6P06 D Description The G6P06 uses advanced trench technology and design G to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. S Schematic diagram General Features VDSS RDS(ON) ) RDS(ON ID @ -10V (Typ) @ -4.5V (Typ) -60V 80m 100m -4A G6P06 Super high dense cell design Advanced trench process techno... See More ⇒

Detailed specifications: G48N03D3, G4N60K, G50N03A, G50N03K, G5N50T, G5N50F, G5N50J, G5N50K, IRF1405, G7P03L, G86N06K, G90N04, GC11N65T, GC11N65F, GC11N65K, GC11N70K, GC11N70T

Keywords - G6P06 MOSFET specs

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