All MOSFET. G7P03L Datasheet

 

G7P03L Datasheet and Replacement


   Type Designator: G7P03L
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 300 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0205 Ohm
   Package: SOT-23
 

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G7P03L Datasheet (PDF)

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G7P03L

GOFORD G7P03L DDescription The G7P03L uses advanced trench technology to provide Gexcellent R , low gate charge and operation with gate DS(ON)voltages as low as 4.5V. This device is suitable for use as a load switch or in Power management. SSchematic diagram General Features VDSS RDS (on) RDS (on) ID @ -10V (Typ) @ -4.5V (Typ) G07P03m 23m -7 -30V 19

Datasheet: G4N60K , G50N03A , G50N03K , G5N50T , G5N50F , G5N50J , G5N50K , G6P06 , MMIS60R580P , G86N06K , G90N04 , GC11N65T , GC11N65F , GC11N65K , GC11N70K , GC11N70T , GC11N70F .

History: IRF2907ZL | SIHD6N62E | IPU60R2K0C6

Keywords - G7P03L MOSFET datasheet

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