G7P03L PDF and Equivalents Search

 

G7P03L Specs and Replacement

Type Designator: G7P03L

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 22 nS

Cossⓘ - Output Capacitance: 300 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0205 Ohm

Package: SOT-23

G7P03L substitution

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G7P03L datasheet

 ..1. Size:1184K  goford
 g7p03l.pdf pdf_icon

G7P03L

GOFORD G7P03L D Description The G7P03L uses advanced trench technology to provide G excellent R , low gate charge and operation with gate DS(ON) voltages as low as 4.5V. This device is suitable for use as a load switch or in Power management. S Schematic diagram General Features VDSS RDS (on) RDS (on) ID @ -10V (Typ) @ -4.5V (Typ) G07P03 m 23m -7 -30V 19... See More ⇒

Detailed specifications: G4N60K, G50N03A, G50N03K, G5N50T, G5N50F, G5N50J, G5N50K, G6P06, 7N60, G86N06K, G90N04, GC11N65T, GC11N65F, GC11N65K, GC11N70K, GC11N70T, GC11N70F

Keywords - G7P03L MOSFET specs

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