G86N06K Specs and Replacement
Type Designator: G86N06K
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 88 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 68 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 29 nS
Cossⓘ - Output Capacitance: 281 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0084 Ohm
Package: TO-252
G86N06K substitution
- MOSFET ⓘ Cross-Reference Search
G86N06K datasheet
g86n06k.pdf
G86N06K GOFORD Description VDS S RDS (on) ID The G86N06K uses advanced trench technology to provide @ (Typ.) 10V excellent R , low gate charge and rugged E DS(ON) AS capability. This device is suitable for PWM, load switching 60V 7.9m 68 A especially for E-Bike controller application. D General Features High power and current handing capability G 100... See More ⇒
Detailed specifications: G50N03A, G50N03K, G5N50T, G5N50F, G5N50J, G5N50K, G6P06, G7P03L, IRFZ48N, G90N04, GC11N65T, GC11N65F, GC11N65K, GC11N70K, GC11N70T, GC11N70F, GT045N10M
Keywords - G86N06K MOSFET specs
G86N06K cross reference
G86N06K equivalent finder
G86N06K pdf lookup
G86N06K substitution
G86N06K replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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