All MOSFET. G86N06K Datasheet

 

G86N06K Datasheet and Replacement


   Type Designator: G86N06K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 88 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 68 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 29 nS
   Cossⓘ - Output Capacitance: 281 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0084 Ohm
   Package: TO-252
 

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G86N06K Datasheet (PDF)

 ..1. Size:864K  goford
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G86N06K

G86N06K GOFORD Description VDS S RDS (on) ID The G86N06K uses advanced trench technology to provide @ (Typ.) 10V excellent R , low gate charge and rugged E DS(ON) AScapability. This device is suitable for PWM, load switching 60V 7.9m 68A especially for E-Bike controller application. D General Features High power and current handing capability G 100

Datasheet: G50N03A , G50N03K , G5N50T , G5N50F , G5N50J , G5N50K , G6P06 , G7P03L , 60N06 , G90N04 , GC11N65T , GC11N65F , GC11N65K , GC11N70K , GC11N70T , GC11N70F , GT045N10M .

History: IRF840LC | IRF840SPBF | IRF840LCLPBF

Keywords - G86N06K MOSFET datasheet

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