G86N06K MOSFET. Datasheet pdf. Equivalent
Type Designator: G86N06K
Marking Code: G86N06
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 88 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 68 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 77 nC
trⓘ - Rise Time: 29 nS
Cossⓘ - Output Capacitance: 281 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0084 Ohm
Package: TO-252
G86N06K Transistor Equivalent Substitute - MOSFET Cross-Reference Search
G86N06K Datasheet (PDF)
..1. Size:864K goford
g86n06k.pdf
g86n06k.pdf
G86N06K GOFORD Description VDS S RDS (on) ID The G86N06K uses advanced trench technology to provide @ (Typ.) 10V excellent R , low gate charge and rugged E DS(ON) AScapability. This device is suitable for PWM, load switching 60V 7.9m 68A especially for E-Bike controller application. D General Features High power and current handing capability G 100
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
