All MOSFET. G90N04 Datasheet

 

G90N04 Datasheet and Replacement


   Type Designator: G90N04
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 65 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 45 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 90 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 898 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: TO-252
 

 G90N04 substitution

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G90N04 Datasheet (PDF)

 ..1. Size:1039K  goford
 g90n04.pdf pdf_icon

G90N04

G90N04GOFORDDescription The uses advanced trench technology and G90N04design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =45V,ID =90A RDS(ON)

 9.1. Size:511K  jiejie micro
 jmtg90n02a.pdf pdf_icon

G90N04

JMTG90N02ADescriptionJMT N-channel Enhancement Mode Power MOSFETFeatures Applications 20V, 75A Load SwitchRDS(ON)

 9.2. Size:922K  cn minos
 mpg90n08p mpg90n08s.pdf pdf_icon

G90N04

80V N-Channel Power MOSFETDESCRIPTIONThe MPG90N08 uses advanced trench technology toprovide excellent R , low gate charge. It can be usedDS(ON)ina wide variety of applications.KEY CHARACTERISTICS V = 80V,I = 90ADS DR

Datasheet: G50N03K , G5N50T , G5N50F , G5N50J , G5N50K , G6P06 , G7P03L , G86N06K , RU7088R , GC11N65T , GC11N65F , GC11N65K , GC11N70K , GC11N70T , GC11N70F , GT045N10M , GT045N10T .

History: FMI07N50E | IRF1010EZS | AOT500 | FQB6N80 | WMK25N65EM | AOT5N60 | FXN25S55GF

Keywords - G90N04 MOSFET datasheet

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