G90N04 PDF and Equivalents Search

 

G90N04 Specs and Replacement

Type Designator: G90N04

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 65 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 45 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 90 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 898 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm

Package: TO-252

G90N04 substitution

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G90N04 datasheet

 ..1. Size:1039K  goford
 g90n04.pdf pdf_icon

G90N04

G90N04 GOFORD Description The uses advanced trench technology and G90N04 design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =45V,ID =90A RDS(ON) ... See More ⇒

 9.1. Size:511K  jiejie micro
 jmtg90n02a.pdf pdf_icon

G90N04

JMTG90N02A Description JMT N-channel Enhancement Mode Power MOSFET Features Applications 20V, 75A Load Switch RDS(ON) ... See More ⇒

 9.2. Size:922K  cn minos
 mpg90n08p mpg90n08s.pdf pdf_icon

G90N04

80V N-Channel Power MOSFET DESCRIPTION The MPG90N08 uses advanced trench technology to provide excellent R , low gate charge. It can be used DS(ON) ina wide variety of applications. KEY CHARACTERISTICS V = 80V,I = 90A DS D R ... See More ⇒

Detailed specifications: G50N03K, G5N50T, G5N50F, G5N50J, G5N50K, G6P06, G7P03L, G86N06K, IRFZ46N, GC11N65T, GC11N65F, GC11N65K, GC11N70K, GC11N70T, GC11N70F, GT045N10M, GT045N10T

Keywords - G90N04 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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