All MOSFET. SSP3N70 Datasheet

 

SSP3N70 MOSFET. Datasheet pdf. Equivalent

Type Designator: SSP3N70

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 75 W

Maximum Drain-Source Voltage |Vds|: 700 V

Maximum Drain Current |Id|: 3 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 5 Ohm

Package: TO220

SSP3N70 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

SSP3N70 Datasheet (PDF)

5.1. ssp3n90.pdf Size:260K _upd-mosfet

SSP3N70 SSP3N70

SSP3N90A Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 6.2 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 3 A Improved Gate Charge Extended Safe Operating Area TO-220 Lower Leakage Current : 25 µA (Max.) @ VDS = 900V Low RDS(ON) : 4.679 Ω (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Chara

5.2. ssp3n90a.pdf Size:936K _samsung

SSP3N70 SSP3N70

Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 6.2 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 900V Low RDS(ON) : 4.679 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units V

 5.3. ssp3n80a.pdf Size:937K _samsung

SSP3N70 SSP3N70

Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 4.8 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 800V Low RDS(ON) : 3.800 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units V

Datasheet: IRFP333 , IRFP340 , IRFP340A , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , 75339P , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC .

 
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