SSP3N70 MOSFET. Datasheet pdf. Equivalent
Type Designator: SSP3N70
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 75 W
Maximum Drain-Source Voltage |Vds|: 700 V
Maximum Drain Current |Id|: 3 A
Maximum Junction Temperature (Tj): 150 °C
Maximum Drain-Source On-State Resistance (Rds): 5 Ohm
Package: TO220
SSP3N70 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SSP3N70 Datasheet (PDF)
5.1. ssp3n90.pdf 
Size:260K _upd-mosfet
SSP3N90A Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 6.2 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 3 A Improved Gate Charge Extended Safe Operating Area TO-220 Lower Leakage Current : 25 µA (Max.) @ VDS = 900V Low RDS(ON) : 4.679 Ω (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Chara
5.2. ssp3n80a.pdf Size:937K _samsung
Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 4.8 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 800V Low RDS(ON) : 3.800 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units V
5.3. ssp3n90a.pdf Size:936K _samsung
Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 6.2 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 900V Low RDS(ON) : 4.679 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units V
Datasheet: SSI6N70A , SSI7N60A , SSP10N60A , SSP1N50A , SSP1N60A , SSP2N60A , SSP2N80A , SSP2N90A , 40673 , SSP3N70A , SSP3N80A , SSP3N90A , SSP45N20A , SSP4N55 , SSP4N60 , SSP4N60AS , SSP4N70 .
