SSP3N70 Datasheet and Replacement
Type Designator: SSP3N70
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 95(max) nS
Cossⓘ - Output Capacitance: 75.6 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
Package: TO220
SSP3N70 substitution
SSP3N70 Datasheet (PDF)
ssp3n90.pdf

SSP3N90AAdvanced Power MOSFETFEATURESBVDSS = 900 V Avalanche Rugged TechnologyRDS(on) = 6.2 Rugged Gate Oxide Technology Lower Input CapacitanceID = 3 A Improved Gate Charge Extended Safe Operating AreaTO-220 Lower Leakage Current : 25 A (Max.) @ VDS = 900V Low RDS(ON) : 4.679 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Chara
ssp3n80a.pdf

Advanced Power MOSFETFEATURESBVDSS = 800 V Avalanche Rugged TechnologyRDS(on) = 4.8 Rugged Gate Oxide Technology Lower Input CapacitanceID = 3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 800V Low RDS(ON) : 3.800 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value
ssp3n90a.pdf

Advanced Power MOSFETFEATURESBVDSS = 900 V Avalanche Rugged TechnologyRDS(on) = 6.2 Rugged Gate Oxide Technology Lower Input CapacitanceID = 3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 900V Low RDS(ON) : 4.679 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value
Datasheet: SSI6N70A , SSI7N60A , SSP10N60A , SSP1N50A , SSP1N60A , SSP2N60A , SSP2N80A , SSP2N90A , IRF730 , SSP3N70A , SSP3N80A , SSP3N90A , SSP45N20A , SSP4N55 , SSP4N60 , SSP4N60AS , SSP4N70 .
History: SSD40P04-20D | SI5853DDC
Keywords - SSP3N70 MOSFET datasheet
SSP3N70 cross reference
SSP3N70 equivalent finder
SSP3N70 lookup
SSP3N70 substitution
SSP3N70 replacement
History: SSD40P04-20D | SI5853DDC



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