GC11N70F Specs and Replacement

Type Designator: GC11N70F

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 31 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 70 nS

Cossⓘ - Output Capacitance: 37 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.395 Ohm

Package: TO-220F

GC11N70F substitution

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GC11N70F datasheet

 ..1. Size:4032K  goford
 gc11n70k gc11n70t gc11n70f.pdf pdf_icon

GC11N70F

GOFORD GC11N70 Description RDS (ON ) The GC11N70 uses advanced super junction technology and VDS ID @ (max) 10V design to provide excellent R and low gate charge. This DS(ON) device is suitable for industry AC-DC SMPS requirement of 11 700V 395m A PFC, AC/DC power conversion, and other industrial power application. General Features New technology for high ... See More ⇒

 9.1. Size:4333K  goford
 gc11n65t gc11n65f gc11n65k.pdf pdf_icon

GC11N70F

GC11N65 GOFORD Description VDS RDS (ON ) ID The GC11N 65 uses advanced super junction technology and @ (Max) 10V design to provide excellent R , low gate charge and DS(ON) operation with low gate voltages. This device is suitable for 650V 360m 11 A industry s AC-DC SMPS requirement for PFC, AC/DC power conversion, and industrial power application. General F... See More ⇒

Detailed specifications: G7P03L, G86N06K, G90N04, GC11N65T, GC11N65F, GC11N65K, GC11N70K, GC11N70T, K2611, GT045N10M, GT045N10T, GT045N10D5, GT060N10T, GT060N10M, GT070N15T, GT1003A, GT1003B

Keywords - GC11N70F MOSFET specs

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