GT045N10M Specs and Replacement

Type Designator: GT045N10M

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 156 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 130 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7.5 nS

Cossⓘ - Output Capacitance: 792 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm

Package: TO-263

GT045N10M substitution

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GT045N10M datasheet

 ..1. Size:927K  goford
 gt045n10m gt045n10t.pdf pdf_icon

GT045N10M

GOFORD GT045N10 N-Channel Enhancement Mode Power MOSFET Description The GT045N10 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features Schematic Diagram VDS 100V ID (at VGS = 10V) 130A RDS(ON) (at VGS = 10V) ... See More ⇒

 6.1. Size:1286K  1
 gt045n10d5.pdf pdf_icon

GT045N10M

GOFORD GT045N10D5 N-Channel Enhancement Mode Power MOSFET Description The GT045N10D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Schematic Diagram General Features VDS 100V ID (at VGS = 10V) 80A RDS(ON) (at VGS = 10V) ... See More ⇒

 6.2. Size:1286K  goford
 gt045n10d5.pdf pdf_icon

GT045N10M

GOFORD GT045N10D5 N-Channel Enhancement Mode Power MOSFET Description The GT045N10D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Schematic Diagram General Features VDS 100V ID (at VGS = 10V) 80A RDS(ON) (at VGS = 10V) ... See More ⇒

Detailed specifications: G86N06K, G90N04, GC11N65T, GC11N65F, GC11N65K, GC11N70K, GC11N70T, GC11N70F, EMB04N03H, GT045N10T, GT045N10D5, GT060N10T, GT060N10M, GT070N15T, GT1003A, GT1003B, GT10N10

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