GT045N10M MOSFET. Datasheet pdf. Equivalent
Type Designator: GT045N10M
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 156 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 130 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 7.5 nS
Cossⓘ - Output Capacitance: 792 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
Package: TO-263
GT045N10M Transistor Equivalent Substitute - MOSFET Cross-Reference Search
GT045N10M Datasheet (PDF)
gt045n10m gt045n10t.pdf
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GOFORDGT045N10N-Channel Enhancement Mode Power MOSFETDescriptionThe GT045N10 uses advanced trench technology to provideexcellent RDS(ON) , low gate charge. It can be used in a widevariety of applications.General FeaturesSchematic Diagram VDS 100V ID (at VGS = 10V) 130A RDS(ON) (at VGS = 10V)
gt045n10d5.pdf
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GOFORDGT045N10D5N-Channel Enhancement Mode Power MOSFETDescriptionThe GT045N10D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used ina wide variety of applications.Schematic DiagramGeneral Features VDS 100V ID (at VGS = 10V) 80A RDS(ON) (at VGS = 10V)
gt045n10d5.pdf
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GOFORDGT045N10D5N-Channel Enhancement Mode Power MOSFETDescriptionThe GT045N10D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used ina wide variety of applications.Schematic DiagramGeneral Features VDS 100V ID (at VGS = 10V) 80A RDS(ON) (at VGS = 10V)
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