All MOSFET. GT045N10M Datasheet

 

GT045N10M Datasheet and Replacement


   Type Designator: GT045N10M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 156 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 130 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7.5 nS
   Cossⓘ - Output Capacitance: 792 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
   Package: TO-263
 

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GT045N10M Datasheet (PDF)

 ..1. Size:927K  goford
 gt045n10m gt045n10t.pdf pdf_icon

GT045N10M

GOFORDGT045N10N-Channel Enhancement Mode Power MOSFETDescriptionThe GT045N10 uses advanced trench technology to provideexcellent RDS(ON) , low gate charge. It can be used in a widevariety of applications.General FeaturesSchematic Diagram VDS 100V ID (at VGS = 10V) 130A RDS(ON) (at VGS = 10V)

 6.1. Size:1286K  1
 gt045n10d5.pdf pdf_icon

GT045N10M

GOFORDGT045N10D5N-Channel Enhancement Mode Power MOSFETDescriptionThe GT045N10D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used ina wide variety of applications.Schematic DiagramGeneral Features VDS 100V ID (at VGS = 10V) 80A RDS(ON) (at VGS = 10V)

 6.2. Size:1286K  goford
 gt045n10d5.pdf pdf_icon

GT045N10M

GOFORDGT045N10D5N-Channel Enhancement Mode Power MOSFETDescriptionThe GT045N10D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used ina wide variety of applications.Schematic DiagramGeneral Features VDS 100V ID (at VGS = 10V) 80A RDS(ON) (at VGS = 10V)

Datasheet: G86N06K , G90N04 , GC11N65T , GC11N65F , GC11N65K , GC11N70K , GC11N70T , GC11N70F , 2SK3918 , GT045N10T , GT045N10D5 , GT060N10T , GT060N10M , GT070N15T , GT1003A , GT1003B , GT10N10 .

History: 2SK819 | SM6107PSU | APL502J | APT7F100B | HY1904V | TSM3548DCX6 | SIHFBC30A

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