GT045N10D5 Specs and Replacement

Type Designator: GT045N10D5

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 85 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7.5 nS

Cossⓘ - Output Capacitance: 792 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm

Package: DFN5X6-8L

GT045N10D5 substitution

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GT045N10D5 datasheet

 ..1. Size:1286K  1
 gt045n10d5.pdf pdf_icon

GT045N10D5

GOFORD GT045N10D5 N-Channel Enhancement Mode Power MOSFET Description The GT045N10D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Schematic Diagram General Features VDS 100V ID (at VGS = 10V) 80A RDS(ON) (at VGS = 10V) ... See More ⇒

 ..2. Size:1286K  goford
 gt045n10d5.pdf pdf_icon

GT045N10D5

GOFORD GT045N10D5 N-Channel Enhancement Mode Power MOSFET Description The GT045N10D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Schematic Diagram General Features VDS 100V ID (at VGS = 10V) 80A RDS(ON) (at VGS = 10V) ... See More ⇒

 6.1. Size:927K  goford
 gt045n10m gt045n10t.pdf pdf_icon

GT045N10D5

GOFORD GT045N10 N-Channel Enhancement Mode Power MOSFET Description The GT045N10 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features Schematic Diagram VDS 100V ID (at VGS = 10V) 130A RDS(ON) (at VGS = 10V) ... See More ⇒

Detailed specifications: GC11N65T, GC11N65F, GC11N65K, GC11N70K, GC11N70T, GC11N70F, GT045N10M, GT045N10T, MMIS60R580P, GT060N10T, GT060N10M, GT070N15T, GT1003A, GT1003B, GT10N10, GT125N10T, GT125N10M

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