All MOSFET. GT045N10D5 Datasheet

 

GT045N10D5 Datasheet and Replacement


   Type Designator: GT045N10D5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 85 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 80 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 7.5 nS
   Cossⓘ - Output Capacitance: 792 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
   Package: DFN5X6-8L
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GT045N10D5 Datasheet (PDF)

 ..1. Size:1286K  1
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GT045N10D5

GOFORDGT045N10D5N-Channel Enhancement Mode Power MOSFETDescriptionThe GT045N10D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used ina wide variety of applications.Schematic DiagramGeneral Features VDS 100V ID (at VGS = 10V) 80A RDS(ON) (at VGS = 10V)

 ..2. Size:1286K  goford
gt045n10d5.pdf pdf_icon

GT045N10D5

GOFORDGT045N10D5N-Channel Enhancement Mode Power MOSFETDescriptionThe GT045N10D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used ina wide variety of applications.Schematic DiagramGeneral Features VDS 100V ID (at VGS = 10V) 80A RDS(ON) (at VGS = 10V)

 6.1. Size:927K  goford
gt045n10m gt045n10t.pdf pdf_icon

GT045N10D5

GOFORDGT045N10N-Channel Enhancement Mode Power MOSFETDescriptionThe GT045N10 uses advanced trench technology to provideexcellent RDS(ON) , low gate charge. It can be used in a widevariety of applications.General FeaturesSchematic Diagram VDS 100V ID (at VGS = 10V) 130A RDS(ON) (at VGS = 10V)

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: TK3A60DA | TMD7N65H | 2SK1191 | SQ2361ES | UT60T03 | JCS2N70R | 4N65KL-T2Q-R

Keywords - GT045N10D5 MOSFET datasheet

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