All MOSFET. GT060N10T Datasheet

 

GT060N10T Datasheet and Replacement


   Type Designator: GT060N10T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 214 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 323 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0052 Ohm
   Package: TO-220
 

 GT060N10T substitution

   - MOSFET ⓘ Cross-Reference Search

 

GT060N10T Datasheet (PDF)

 ..1. Size:578K  goford
 gt060n10t gt060n10m.pdf pdf_icon

GT060N10T

GOFORDGT060N10N-Channel Enhancement Mode Power MOSFETDescriptionThe GT060N10 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.General FeaturesSchematic Diagram VDS 100V ID (at VGS = 10V) 120A RDS(ON) (at VGS = 10V)

Datasheet: GC11N65F , GC11N65K , GC11N70K , GC11N70T , GC11N70F , GT045N10M , GT045N10T , GT045N10D5 , HY1906P , GT060N10M , GT070N15T , GT1003A , GT1003B , GT10N10 , GT125N10T , GT125N10M , GT125N10F .

History: NCE603583 | SPD02N50C3 | SIA453EDJ | 2SK1981 | SM6362D1RL | SWP046R08E8T | FTK1090

Keywords - GT060N10T MOSFET datasheet

 GT060N10T cross reference
 GT060N10T equivalent finder
 GT060N10T lookup
 GT060N10T substitution
 GT060N10T replacement

 

 
Back to Top

 


 
.