All MOSFET. GT060N10T Datasheet

 

GT060N10T MOSFET. Datasheet pdf. Equivalent


   Type Designator: GT060N10T
   Marking Code: GT060N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 214 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 120 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 60 nC
   trⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 323 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0052 Ohm
   Package: TO-220

 GT060N10T Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

GT060N10T Datasheet (PDF)

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 gt060n10t gt060n10m.pdf

GT060N10T GT060N10T

GOFORDGT060N10N-Channel Enhancement Mode Power MOSFETDescriptionThe GT060N10 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.General FeaturesSchematic Diagram VDS 100V ID (at VGS = 10V) 120A RDS(ON) (at VGS = 10V)

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