GT060N10T Specs and Replacement

Type Designator: GT060N10T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 214 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 323 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0052 Ohm

Package: TO-220

GT060N10T substitution

- MOSFET ⓘ Cross-Reference Search

 

GT060N10T datasheet

 ..1. Size:578K  goford
 gt060n10t gt060n10m.pdf pdf_icon

GT060N10T

GOFORD GT060N10 N-Channel Enhancement Mode Power MOSFET Description The GT060N10 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features Schematic Diagram VDS 100V ID (at VGS = 10V) 120A RDS(ON) (at VGS = 10V) ... See More ⇒

Detailed specifications: GC11N65F, GC11N65K, GC11N70K, GC11N70T, GC11N70F, GT045N10M, GT045N10T, GT045N10D5, AOD4184A, GT060N10M, GT070N15T, GT1003A, GT1003B, GT10N10, GT125N10T, GT125N10M, GT125N10F

Keywords - GT060N10T MOSFET specs

 GT060N10T cross reference

 GT060N10T equivalent finder

 GT060N10T pdf lookup

 GT060N10T substitution

 GT060N10T replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility