GT060N10T MOSFET. Datasheet pdf. Equivalent
Type Designator: GT060N10T
Marking Code: GT060N10
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 214 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 120 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Total Gate Charge (Qg): 60 nC
Rise Time (tr): 6 nS
Drain-Source Capacitance (Cd): 323 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0052 Ohm
Package: TO-220
GT060N10T Transistor Equivalent Substitute - MOSFET Cross-Reference Search
GT060N10T Datasheet (PDF)
..1. Size:578K goford
gt060n10t gt060n10m.pdf
gt060n10t gt060n10m.pdf
GOFORDGT060N10N-Channel Enhancement Mode Power MOSFETDescriptionThe GT060N10 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.General FeaturesSchematic Diagram VDS 100V ID (at VGS = 10V) 120A RDS(ON) (at VGS = 10V)
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