All MOSFET. GT060N10M Datasheet

 

GT060N10M Datasheet and Replacement


   Type Designator: GT060N10M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 214 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 120 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 323 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0052 Ohm
   Package: TO-263
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GT060N10M Datasheet (PDF)

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GT060N10M

GOFORDGT060N10N-Channel Enhancement Mode Power MOSFETDescriptionThe GT060N10 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.General FeaturesSchematic Diagram VDS 100V ID (at VGS = 10V) 120A RDS(ON) (at VGS = 10V)

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History: ALD1103DB | CHM85A3PAGP | SQ9407EY-T1 | TK7P65W | SFFX054Z

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