GT070N15T Specs and Replacement

Type Designator: GT070N15T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 400 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 140 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 32.3 nS

Cossⓘ - Output Capacitance: 2273 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm

Package: TO-220

GT070N15T substitution

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GT070N15T datasheet

 ..1. Size:1199K  goford
 gt070n15t.pdf pdf_icon

GT070N15T

GOFORD GT070N15T N-Channel MOSFET Description use advanced technology to provide low GT070N15T , R DS(ON) low gate charge, fast switching and excellent avalanche characteristics. This device is specially designed to get better ruggedness and suitable to use Schematic diagram in motor control applications. General Features VDS 150V ID (at VGS = 10V) 140A RDS(ON) (a... See More ⇒

Detailed specifications: GC11N70K, GC11N70T, GC11N70F, GT045N10M, GT045N10T, GT045N10D5, GT060N10T, GT060N10M, 60N06, GT1003A, GT1003B, GT10N10, GT125N10T, GT125N10M, GT125N10F, GT12N06S, GT130N03D5

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