All MOSFET. GT070N15T Datasheet

 

GT070N15T Datasheet and Replacement


   Type Designator: GT070N15T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 400 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 140 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 32.3 nS
   Cossⓘ - Output Capacitance: 2273 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
   Package: TO-220
 

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GT070N15T Datasheet (PDF)

 ..1. Size:1199K  goford
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GT070N15T

GOFORD GT070N15TN-Channel MOSFETDescription use advanced technology to provide low GT070N15T ,R DS(ON) low gate charge, fast switching and excellentavalanche characteristics. This device is specially designed to get better ruggedness and suitable to useSchematic diagramin motor control applications.General Features VDS 150V ID (at VGS = 10V) 140A RDS(ON) (a

Datasheet: GC11N70K , GC11N70T , GC11N70F , GT045N10M , GT045N10T , GT045N10D5 , GT060N10T , GT060N10M , 60N06 , GT1003A , GT1003B , GT10N10 , GT125N10T , GT125N10M , GT125N10F , GT12N06S , GT130N03D5 .

History: GT060N10T | SSP7481P | DMN6040SSD | DMN6069SE | SIZ710DT | SSPS7331P

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