GT125N10M Datasheet and Replacement
Type Designator: GT125N10M
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 192 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 130 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 7.5 nS
Cossⓘ - Output Capacitance: 792.3 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0046 Ohm
Package: TO-263
GT125N10M substitution
GT125N10M Datasheet (PDF)
gt125n10t gt125n10m gt125n10f.pdf
GT125N10GOFORD General Description GT125N10 use advanced SFGMOSTM RDS(ON)technology to provide low R , low gate DS(ON) VDSS ID @10V (Typ.)charge, fast switching and excellent avalanche characteristics. This device is specially designed 100V 130A4.1mto get better ruggedness and suitable to use in motor control applications. Applications Features Consu
Datasheet: GT045N10D5 , GT060N10T , GT060N10M , GT070N15T , GT1003A , GT1003B , GT10N10 , GT125N10T , IRF3205 , GT125N10F , GT12N06S , GT130N03D5 , GT15N10S , GT45N06 , GT52N10D5 , GT52N10T , GT55N06 .
History: CMT2N7002WG
Keywords - GT125N10M MOSFET datasheet
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History: CMT2N7002WG
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