GT125N10F Datasheet. Specs and Replacement

Type Designator: GT125N10F  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 34 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 130 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7.5 nS

Cossⓘ - Output Capacitance: 792.3 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0046 Ohm

Package: TO-220F

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GT125N10F datasheet

 ..1. Size:3940K  goford
 gt125n10t gt125n10m gt125n10f.pdf pdf_icon

GT125N10F

GT125N10 GOFORD General Description GT125N10 use advanced SFGMOSTM RDS(ON) technology to provide low R , low gate DS(ON) VDSS ID @10V (Typ.) charge, fast switching and excellent avalanche characteristics. This device is specially designed 100V 130 A 4.1m to get better ruggedness and suitable to use in motor control applications. Applications Features Consu... See More ⇒

 9.1. Size:414K  russia
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GT125N10F

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Detailed specifications: GT060N10T, GT060N10M, GT070N15T, GT1003A, GT1003B, GT10N10, GT125N10T, GT125N10M, IRF840, GT12N06S, GT130N03D5, GT15N10S, GT45N06, GT52N10D5, GT52N10T, GT55N06, GT68N12T

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