All MOSFET. GT125N10F Datasheet

 

GT125N10F MOSFET. Datasheet pdf. Equivalent


   Type Designator: GT125N10F
   Marking Code: GT125N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 34 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 130 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 101.6 nC
   trⓘ - Rise Time: 7.5 nS
   Cossⓘ - Output Capacitance: 792.3 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0046 Ohm
   Package: TO-220F

 GT125N10F Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

GT125N10F Datasheet (PDF)

 ..1. Size:3940K  goford
 gt125n10t gt125n10m gt125n10f.pdf

GT125N10F GT125N10F

GT125N10GOFORD General Description GT125N10 use advanced SFGMOSTM RDS(ON)technology to provide low R , low gate DS(ON) VDSS ID @10V (Typ.)charge, fast switching and excellent avalanche characteristics. This device is specially designed 100V 130A4.1mto get better ruggedness and suitable to use in motor control applications. Applications Features Consu

 9.1. Size:414K  russia
 gt125a-b-v-g-d-e-zh-i-k-l.pdf

GT125N10F

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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