GT125N10F Datasheet and Replacement
Type Designator: GT125N10F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 34 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 130 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 7.5 nS
Cossⓘ - Output Capacitance: 792.3 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0046 Ohm
Package: TO-220F
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GT125N10F Datasheet (PDF)
gt125n10t gt125n10m gt125n10f.pdf
GT125N10GOFORD General Description GT125N10 use advanced SFGMOSTM RDS(ON)technology to provide low R , low gate DS(ON) VDSS ID @10V (Typ.)charge, fast switching and excellent avalanche characteristics. This device is specially designed 100V 130A4.1mto get better ruggedness and suitable to use in motor control applications. Applications Features Consu
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: UF830G-TA3-T | SI4010DY | UF640L-TF2-T | PSMN013-100XS | AP09N20BGH-HF | AOT20S60 | SI4835DDY
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History: UF830G-TA3-T | SI4010DY | UF640L-TF2-T | PSMN013-100XS | AP09N20BGH-HF | AOT20S60 | SI4835DDY
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