GT125N10F MOSFET. Datasheet pdf. Equivalent
Type Designator: GT125N10F
Marking Code: GT125N10
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 34 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 130 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 101.6 nC
Rise Time (tr): 7.5 nS
Drain-Source Capacitance (Cd): 792.3 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0046 Ohm
Package: TO-220F
GT125N10F Transistor Equivalent Substitute - MOSFET Cross-Reference Search
GT125N10F Datasheet (PDF)
0.1. gt125n10t gt125n10m gt125n10f.pdf 
Size:3940K _goford
GT125N10GOFORD General Description GT125N10 use advanced SFGMOSTM RDS(ON)technology to provide low R , low gate DS(ON) VDSS ID @10V (Typ.)charge, fast switching and excellent avalanche characteristics. This device is specially designed 100V 130A4.1mto get better ruggedness and suitable to use in motor control applications. Applications Features Consu
9.1. gt125a-b-v-g-d-e-zh-i-k-l.pdf Size:414K _russia
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