GT125N10F Datasheet and Replacement
Type Designator: GT125N10F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 34 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 130 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 7.5 nS
Cossⓘ - Output Capacitance: 792.3 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0046 Ohm
Package: TO-220F
GT125N10F substitution
GT125N10F Datasheet (PDF)
gt125n10t gt125n10m gt125n10f.pdf
GT125N10GOFORD General Description GT125N10 use advanced SFGMOSTM RDS(ON)technology to provide low R , low gate DS(ON) VDSS ID @10V (Typ.)charge, fast switching and excellent avalanche characteristics. This device is specially designed 100V 130A4.1mto get better ruggedness and suitable to use in motor control applications. Applications Features Consu
Datasheet: GT060N10T , GT060N10M , GT070N15T , GT1003A , GT1003B , GT10N10 , GT125N10T , GT125N10M , IRF740 , GT12N06S , GT130N03D5 , GT15N10S , GT45N06 , GT52N10D5 , GT52N10T , GT55N06 , GT68N12T .
History: OSG60R900FF | 6N70KG-TM3-T | 2SK2521-01 | 1N60L-TM3-T | FQP3N25 | D10PF06 | ME7820S-G
Keywords - GT125N10F MOSFET datasheet
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History: OSG60R900FF | 6N70KG-TM3-T | 2SK2521-01 | 1N60L-TM3-T | FQP3N25 | D10PF06 | ME7820S-G
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