GT125N10F Datasheet and Replacement
Type Designator: GT125N10F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 34 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 130 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 7.5 nS
Cossⓘ - Output Capacitance: 792.3 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0046 Ohm
Package: TO-220F
GT125N10F substitution
GT125N10F Datasheet (PDF)
gt125n10t gt125n10m gt125n10f.pdf
GT125N10GOFORD General Description GT125N10 use advanced SFGMOSTM RDS(ON)technology to provide low R , low gate DS(ON) VDSS ID @10V (Typ.)charge, fast switching and excellent avalanche characteristics. This device is specially designed 100V 130A4.1mto get better ruggedness and suitable to use in motor control applications. Applications Features Consu
Datasheet: GT060N10T , GT060N10M , GT070N15T , GT1003A , GT1003B , GT10N10 , GT125N10T , GT125N10M , IRF740 , GT12N06S , GT130N03D5 , GT15N10S , GT45N06 , GT52N10D5 , GT52N10T , GT55N06 , GT68N12T .
Keywords - GT125N10F MOSFET datasheet
GT125N10F cross reference
GT125N10F equivalent finder
GT125N10F lookup
GT125N10F substitution
GT125N10F replacement
LIST
Last Update
MOSFET: JMTE6888A | JMTE3003A | JMTE3002B | JMTE068N07A | JMTE060N06A | JMTE035N06D | JMTE035N04A | JMTE025N04D | JMTE018N03A | JMTD3134K | JMTD2N7002KS | JMSL1509PG | JMSL10A13P | JMSL10A13L | JMSL10A13K | JMSL1010PU
Popular searches
a1693 transistor | a933 datasheet | c535 transistor | irf3205 reemplazo | mpsu06 | кт630 | 2g381 transistor | 2sc2383 transistor equivalent