All MOSFET. GT12N06S Datasheet


GT12N06S MOSFET. Datasheet pdf. Equivalent

Type Designator: GT12N06S

Marking Code: GT12N06

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 3.1 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V

Maximum Drain Current |Id|: 12 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 31 nC

Rise Time (tr): 4.5 nS

Drain-Source Capacitance (Cd): 470 pF

Maximum Drain-Source On-State Resistance (Rds): 0.009 Ohm

Package: SOP-8

GT12N06S Transistor Equivalent Substitute - MOSFET Cross-Reference Search


GT12N06S Datasheet (PDF)

0.1. gt12n06s.pdf Size:864K _goford


GOFORDGT12N06SN-Channel Enhancement Mode Power MOSFETDescriptionThe GT12N06S uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.General FeaturesSchematic Diagram VDS 60V ID (at VGS = 10V) 12A RDS(ON) (at VGS = 10V)

9.1. kgt12n120ndh.pdf Size:1077K _kec


SEMICONDUCTORKGT12N120NDHTECHNICAL DATAGeneral DescriptionKEC NPT IGBTs offer low switching losses, high energy efficiencyand high avalanche ruggedness for soft switching application such asIH(induction heating), microwave oven, etc.FEATURES High speed switchingHigh system efficiencySoft current turn-off waveformsExtremely enhanced avalanche capabilityMAXIMUM RAT

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