All MOSFET. GT12N06S Datasheet

 

GT12N06S Datasheet and Replacement


   Type Designator: GT12N06S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 4.5 nS
   Cossⓘ - Output Capacitance: 470 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: SOP-8
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GT12N06S Datasheet (PDF)

 ..1. Size:864K  goford
 gt12n06s.pdf pdf_icon

GT12N06S

GOFORDGT12N06SN-Channel Enhancement Mode Power MOSFETDescriptionThe GT12N06S uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.General FeaturesSchematic Diagram VDS 60V ID (at VGS = 10V) 12A RDS(ON) (at VGS = 10V)

 9.1. Size:1077K  kec
 kgt12n120ndh.pdf pdf_icon

GT12N06S

SEMICONDUCTORKGT12N120NDHTECHNICAL DATAGeneral DescriptionKEC NPT IGBTs offer low switching losses, high energy efficiencyand high avalanche ruggedness for soft switching application such asIH(induction heating), microwave oven, etc.FEATURES High speed switchingHigh system efficiencySoft current turn-off waveformsExtremely enhanced avalanche capabilityMAXIMUM RAT

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History: RU3089L | HLML6401 | VBZA9926 | BUK7K17-60E | IRFR13N15D | HMS80N10 | AP85T03GH-HF

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