GT12N06S MOSFET. Datasheet pdf. Equivalent
Type Designator: GT12N06S
Marking Code: GT12N06
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 12 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 31 nC
trⓘ - Rise Time: 4.5 nS
Cossⓘ - Output Capacitance: 470 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: SOP-8
GT12N06S Transistor Equivalent Substitute - MOSFET Cross-Reference Search
GT12N06S Datasheet (PDF)
gt12n06s.pdf
GOFORDGT12N06SN-Channel Enhancement Mode Power MOSFETDescriptionThe GT12N06S uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.General FeaturesSchematic Diagram VDS 60V ID (at VGS = 10V) 12A RDS(ON) (at VGS = 10V)
kgt12n120ndh.pdf
SEMICONDUCTORKGT12N120NDHTECHNICAL DATAGeneral DescriptionKEC NPT IGBTs offer low switching losses, high energy efficiencyand high avalanche ruggedness for soft switching application such asIH(induction heating), microwave oven, etc.FEATURES High speed switchingHigh system efficiencySoft current turn-off waveformsExtremely enhanced avalanche capabilityMAXIMUM RAT
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