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GT12N06S Specs and Replacement


   Type Designator: GT12N06S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4.5 nS
   Cossⓘ - Output Capacitance: 470 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: SOP-8
 

 GT12N06S substitution

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GT12N06S Specs

 ..1. Size:864K  goford
 gt12n06s.pdf pdf_icon

GT12N06S

GOFORD GT12N06S N-Channel Enhancement Mode Power MOSFET Description The GT12N06S uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features Schematic Diagram VDS 60V ID (at VGS = 10V) 12A RDS(ON) (at VGS = 10V) ... See More ⇒

 9.1. Size:1077K  kec
 kgt12n120ndh.pdf pdf_icon

GT12N06S

SEMICONDUCTOR KGT12N120NDH TECHNICAL DATA General Description KEC NPT IGBTs offer low switching losses, high energy efficiency and high avalanche ruggedness for soft switching application such as IH(induction heating), microwave oven, etc. FEATURES High speed switching High system efficiency Soft current turn-off waveforms Extremely enhanced avalanche capability MAXIMUM RAT... See More ⇒

Detailed specifications: GT060N10M , GT070N15T , GT1003A , GT1003B , GT10N10 , GT125N10T , GT125N10M , GT125N10F , IRF840 , GT130N03D5 , GT15N10S , GT45N06 , GT52N10D5 , GT52N10T , GT55N06 , GT68N12T , GT68N12M .

History: 2SJ247

Keywords - GT12N06S MOSFET specs

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