All MOSFET. GT45N06 Datasheet

 

GT45N06 MOSFET. Datasheet pdf. Equivalent


   Type Designator: GT45N06
   Marking Code: GT45N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 45 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 31 nC
   trⓘ - Rise Time: 4.5 nS
   Cossⓘ - Output Capacitance: 470 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0082 Ohm
   Package: DFN3X3-8L

 GT45N06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

GT45N06 Datasheet (PDF)

 ..1. Size:2712K  goford
 gt45n06.pdf

GT45N06 GT45N06

GOFORDGT45N06General Features RDS(ON) RDS(ON) VDSS ID @10V (typ) @4.5V (typ) 60V 6.8 m 9.5m 45A Split Gate Trench Power MV MOSFET technology Low RDS(ON)Low Gate ChargeOptimized for fast-switching applications RoHS CompliantTop ViewApplicationsDDD DDD Synchronus Rectification in DC/DC and AC/DC D Pin1DConvertersSG

 9.1. Size:62K  ixys
 ixgt45n120.pdf

GT45N06 GT45N06

IXGH 45N120 VCES = 1200 VIXGT 45N120 IC25 = 75 AIGBTVCE(sat) = 2.5 VHigh Voltage, Low VCE(sat)tfi(typ) = 390 nsPreliminary data sheetSymbol Test Conditions Maximum Ratings TO-268 (IXGT)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 VGVGES Continuous 20 VEC (TAB)VGEM Transient 30 VIC25 TC = 25C, limited by leads 75 ATO-247 AD (I

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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