All MOSFET. GT45N06 Datasheet

 

GT45N06 Datasheet and Replacement


   Type Designator: GT45N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 45 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4.5 nS
   Cossⓘ - Output Capacitance: 470 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0082 Ohm
   Package: DFN3X3-8L
 

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GT45N06 Datasheet (PDF)

 ..1. Size:2712K  goford
 gt45n06.pdf pdf_icon

GT45N06

GOFORDGT45N06General Features RDS(ON) RDS(ON) VDSS ID @10V (typ) @4.5V (typ) 60V 6.8 m 9.5m 45A Split Gate Trench Power MV MOSFET technology Low RDS(ON)Low Gate ChargeOptimized for fast-switching applications RoHS CompliantTop ViewApplicationsDDD DDD Synchronus Rectification in DC/DC and AC/DC D Pin1DConvertersSG

 9.1. Size:62K  ixys
 ixgt45n120.pdf pdf_icon

GT45N06

IXGH 45N120 VCES = 1200 VIXGT 45N120 IC25 = 75 AIGBTVCE(sat) = 2.5 VHigh Voltage, Low VCE(sat)tfi(typ) = 390 nsPreliminary data sheetSymbol Test Conditions Maximum Ratings TO-268 (IXGT)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 VGVGES Continuous 20 VEC (TAB)VGEM Transient 30 VIC25 TC = 25C, limited by leads 75 ATO-247 AD (I

Datasheet: GT1003B , GT10N10 , GT125N10T , GT125N10M , GT125N10F , GT12N06S , GT130N03D5 , GT15N10S , IRF540 , GT52N10D5 , GT52N10T , GT55N06 , GT68N12T , GT68N12M , XM2N200 , DMP3007SPS , DMP3013SFV .

History: HSCB20D03

Keywords - GT45N06 MOSFET datasheet

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