GT45N06 MOSFET Datasheet: N-Ch, 60V, 45A. Full specification with pinout and replacement list

GT45N06 Specs and Replacement

   Type Designator: GT45N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 45 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 4.5 nS
   Cossⓘ - Output Capacitance: 470 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0082 Ohm
   Package: DFN3X3-8L

GT45N06 substitution

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GT45N06 datasheet

..1. Size:2712K goford
gt45n06.pdf pdf_icon

GOFORD GT45N06 General Features RDS(ON) RDS(ON) VDSS ID @10V (typ) @4.5V (typ) 60V 6.8 m 9.5m 45A Split Gate Trench Power MV MOSFET technology Low RDS(ON) Low Gate Charge Optimized for fast-switching applications RoHS Compliant Top View Applications D D D D D D Synchronus Rectification in DC/DC and AC/DC D Pin1 D Converters S G... See More ⇒

9.1. Size:62K ixys
ixgt45n120.pdf pdf_icon

IXGH 45N120 VCES = 1200 V IXGT 45N120 IC25 = 75 A IGBT VCE(sat) = 2.5 V High Voltage, Low VCE(sat) tfi(typ) = 390 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V G VGES Continuous 20 V E C (TAB) VGEM Transient 30 V IC25 TC = 25 C, limited by leads 75 A TO-247 AD (I... See More ⇒

Detailed specifications: GT1003B , GT10N10 , GT125N10T , GT125N10M , GT125N10F , GT12N06S , GT130N03D5 , GT15N10S , IRF540 , GT52N10D5 , GT52N10T , GT55N06 , GT68N12T , GT68N12M , XM2N200 , DMP3007SPS , DMP3013SFV .