All MOSFET. GT45N06 Datasheet


GT45N06 MOSFET. Datasheet pdf. Equivalent

Type Designator: GT45N06

Marking Code: GT45N06

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 50 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V

Maximum Drain Current |Id|: 45 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 31 nC

Rise Time (tr): 4.5 nS

Drain-Source Capacitance (Cd): 470 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0082 Ohm

Package: DFN3X3-8L

GT45N06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search


GT45N06 Datasheet (PDF)

0.1. gt45n06.pdf Size:2712K _goford


GOFORDGT45N06General Features RDS(ON) RDS(ON) VDSS ID @10V (typ) @4.5V (typ) 60V 6.8 m 9.5m 45A Split Gate Trench Power MV MOSFET technology Low RDS(ON)Low Gate ChargeOptimized for fast-switching applications RoHS CompliantTop ViewApplicationsDDD DDD Synchronus Rectification in DC/DC and AC/DC D Pin1DConvertersSG

9.1. ixgt45n120.pdf Size:62K _ixys


IXGH 45N120 VCES = 1200 VIXGT 45N120 IC25 = 75 AIGBTVCE(sat) = 2.5 VHigh Voltage, Low VCE(sat)tfi(typ) = 390 nsPreliminary data sheetSymbol Test Conditions Maximum Ratings TO-268 (IXGT)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 VGVGES Continuous 20 VEC (TAB)VGEM Transient 30 VIC25 TC = 25C, limited by leads 75 ATO-247 AD (I

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