GT52N10T Datasheet and Replacement
Type Designator: GT52N10T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 227 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 62 nS
Cossⓘ - Output Capacitance: 457 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: TO-220
GT52N10T substitution
GT52N10T Datasheet (PDF)
gt52n10t.pdf
GOFORDGT52N10TN-Channel Enhancement Mode Power MOSFETDescriptionThe GT52N10T uses advanced trench technology to provideexcellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.General FeaturesSchematic Diagram VDS 100V ID (at VGS = 10V) 80A RDS(ON) (at VGS = 10V)
gt52n10d5.pdf
GOFORD GT52N10D5N-Channel Enhancement Mode Power MOSFETDescriptionThe GT52N10D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.General FeaturesSchematic diagram VDS 100V ID (at VGS = 10V) 71A RDS(ON) (at VGS = 10V)
gt52n10d5.pdf
GOFORD GT52N10D5N-Channel Enhancement Mode Power MOSFETDescriptionThe GT52N10D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.General FeaturesSchematic diagram VDS 100V ID (at VGS = 10V) 71A RDS(ON) (at VGS = 10V)
Datasheet: GT125N10T , GT125N10M , GT125N10F , GT12N06S , GT130N03D5 , GT15N10S , GT45N06 , GT52N10D5 , IRF640 , GT55N06 , GT68N12T , GT68N12M , XM2N200 , DMP3007SPS , DMP3013SFV , DMP3017SFGQ , DMP3036SFV .
History: CHT2302GP | STU601S | 2P829G9 | KRF7703 | NCEP40T15AGU | SPM1008 | SIHF9Z24
Keywords - GT52N10T MOSFET datasheet
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History: CHT2302GP | STU601S | 2P829G9 | KRF7703 | NCEP40T15AGU | SPM1008 | SIHF9Z24
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