All MOSFET. GT52N10T Datasheet

 

GT52N10T MOSFET. Datasheet pdf. Equivalent

Type Designator: GT52N10T

Marking Code: GT52N10

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 227 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.2 V

Maximum Drain Current |Id|: 80 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 44.5 nC

Rise Time (tr): 62 nS

Drain-Source Capacitance (Cd): 457 pF

Maximum Drain-Source On-State Resistance (Rds): 0.009 Ohm

Package: TO-220

GT52N10T Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

GT52N10T Datasheet (PDF)

0.1. gt52n10t.pdf Size:679K _goford

GT52N10T
GT52N10T

GOFORDGT52N10TN-Channel Enhancement Mode Power MOSFETDescriptionThe GT52N10T uses advanced trench technology to provideexcellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.General FeaturesSchematic Diagram VDS 100V ID (at VGS = 10V) 80A RDS(ON) (at VGS = 10V)

7.1. gt52n10d5.pdf Size:723K _goford

GT52N10T
GT52N10T

GOFORD GT52N10D5N-Channel Enhancement Mode Power MOSFETDescriptionThe GT52N10D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.General FeaturesSchematic diagram VDS 100V ID (at VGS = 10V) 71A RDS(ON) (at VGS = 10V)

 

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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