GT52N10T MOSFET. Datasheet pdf. Equivalent
Type Designator: GT52N10T
Marking Code: GT52N10
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 227 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
|Id|ⓘ - Maximum Drain Current: 80 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Total Gate Charge (Qg): 44.5 nC
Rise Time (tr): 62 nS
Drain-Source Capacitance (Cd): 457 pF
Maximum Drain-Source On-State Resistance (Rds): 0.009 Ohm
Package: TO-220
GT52N10T Transistor Equivalent Substitute - MOSFET Cross-Reference Search
GT52N10T Datasheet (PDF)
gt52n10t.pdf
GOFORDGT52N10TN-Channel Enhancement Mode Power MOSFETDescriptionThe GT52N10T uses advanced trench technology to provideexcellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.General FeaturesSchematic Diagram VDS 100V ID (at VGS = 10V) 80A RDS(ON) (at VGS = 10V)
gt52n10d5.pdf
GOFORD GT52N10D5N-Channel Enhancement Mode Power MOSFETDescriptionThe GT52N10D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.General FeaturesSchematic diagram VDS 100V ID (at VGS = 10V) 71A RDS(ON) (at VGS = 10V)
gt52n10d5.pdf
GOFORD GT52N10D5N-Channel Enhancement Mode Power MOSFETDescriptionThe GT52N10D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.General FeaturesSchematic diagram VDS 100V ID (at VGS = 10V) 71A RDS(ON) (at VGS = 10V)
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