GT52N10T Specs and Replacement

Type Designator: GT52N10T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 227 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 62 nS

Cossⓘ - Output Capacitance: 457 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm

Package: TO-220

GT52N10T substitution

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GT52N10T datasheet

 ..1. Size:679K  goford
 gt52n10t.pdf pdf_icon

GT52N10T

GOFORD GT52N10T N-Channel Enhancement Mode Power MOSFET Description The GT52N10T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features Schematic Diagram VDS 100V ID (at VGS = 10V) 80A RDS(ON) (at VGS = 10V) ... See More ⇒

 7.1. Size:723K  1
 gt52n10d5.pdf pdf_icon

GT52N10T

GOFORD GT52N10D5 N-Channel Enhancement Mode Power MOSFET Description The GT52N10D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features Schematic diagram VDS 100V ID (at VGS = 10V) 71A RDS(ON) (at VGS = 10V) ... See More ⇒

 7.2. Size:723K  goford
 gt52n10d5.pdf pdf_icon

GT52N10T

GOFORD GT52N10D5 N-Channel Enhancement Mode Power MOSFET Description The GT52N10D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features Schematic diagram VDS 100V ID (at VGS = 10V) 71A RDS(ON) (at VGS = 10V) ... See More ⇒

Detailed specifications: GT125N10T, GT125N10M, GT125N10F, GT12N06S, GT130N03D5, GT15N10S, GT45N06, GT52N10D5, IRFP460, GT55N06, GT68N12T, GT68N12M, XM2N200, DMP3007SPS, DMP3013SFV, DMP3017SFGQ, DMP3036SFV

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