All MOSFET. GT55N06 Datasheet


GT55N06 MOSFET. Datasheet pdf. Equivalent

Type Designator: GT55N06

Marking Code: GT55N06

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 70 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V

Maximum Drain Current |Id|: 53 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 31 nC

Rise Time (tr): 4.5 nS

Drain-Source Capacitance (Cd): 470 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0082 Ohm

Package: DFN5X6-8L

GT55N06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search


GT55N06 Datasheet (PDF)

0.1. gt55n06.pdf Size:11366K _goford


GOFORDGT55N06Description The GT55N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features Schematic diagram RDS(ON) RDS(ON) VDSS ID @10V (typ) @4.5V (typ) 60V 53A 6.8 9.5 m m Marking and pin assignment High density cell design for ultra low Rdson

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