GT55N06 Specs and Replacement

Type Designator: GT55N06

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 70 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 53 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4.5 nS

Cossⓘ - Output Capacitance: 470 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0082 Ohm

Package: DFN5X6-8L

GT55N06 substitution

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GT55N06 datasheet

 ..1. Size:11366K  1
 gt55n06.pdf pdf_icon

GT55N06

GOFORD GT55N06 Description The GT55N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features Schematic diagram RDS(ON) RDS(ON) VDSS ID @10V (typ) @4.5V (typ) 60V 53A 6.8 9.5 m m Marking and pin assignment High density cell design for ultra low Rdson ... See More ⇒

 ..2. Size:11366K  goford
 gt55n06.pdf pdf_icon

GT55N06

GOFORD GT55N06 Description The GT55N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features Schematic diagram RDS(ON) RDS(ON) VDSS ID @10V (typ) @4.5V (typ) 60V 53A 6.8 9.5 m m Marking and pin assignment High density cell design for ultra low Rdson ... See More ⇒

Detailed specifications: GT125N10M, GT125N10F, GT12N06S, GT130N03D5, GT15N10S, GT45N06, GT52N10D5, GT52N10T, IRFZ44, GT68N12T, GT68N12M, XM2N200, DMP3007SPS, DMP3013SFV, DMP3017SFGQ, DMP3036SFV, DMP3098LQ

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