GT55N06 MOSFET. Datasheet pdf. Equivalent
Type Designator: GT55N06
Marking Code: GT55N06
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 70 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 53 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 31 nC
trⓘ - Rise Time: 4.5 nS
Cossⓘ - Output Capacitance: 470 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0082 Ohm
Package: DFN5X6-8L
GT55N06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
GT55N06 Datasheet (PDF)
gt55n06.pdf
GOFORDGT55N06Description The GT55N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features Schematic diagram RDS(ON) RDS(ON) VDSS ID @10V (typ) @4.5V (typ) 60V 53A 6.8 9.5 m m Marking and pin assignment High density cell design for ultra low Rdson
gt55n06.pdf
GOFORDGT55N06Description The GT55N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features Schematic diagram RDS(ON) RDS(ON) VDSS ID @10V (typ) @4.5V (typ) 60V 53A 6.8 9.5 m m Marking and pin assignment High density cell design for ultra low Rdson
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