XM2N200 Datasheet and Replacement
Type Designator: XM2N200
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 190 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 90 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.54 Ohm
Package: TO-92
XM2N200 substitution
XM2N200 Datasheet (PDF)
xm2n200.pdf

GOFORDXM2N200.DDescription The XM2N200.uses advanced trench technology and Gdesign to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features SSchematic diagram VDSS RDS(ON) ID @10V (typ) 190V 356.6m 2A High density cell design for ultra low Rdson Fully characterized avalanche voltage an
Datasheet: GT130N03D5 , GT15N10S , GT45N06 , GT52N10D5 , GT52N10T , GT55N06 , GT68N12T , GT68N12M , IRFP260N , DMP3007SPS , DMP3013SFV , DMP3017SFGQ , DMP3036SFV , DMP3098LQ , DMP3125L , DMP32D5SFB , DMP4013LFGQ .
History: STD4N25T4 | 2N6760JANTXV | SFI9510 | BUK7610-100B | IXKH30N60C5 | PHD3055E
Keywords - XM2N200 MOSFET datasheet
XM2N200 cross reference
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History: STD4N25T4 | 2N6760JANTXV | SFI9510 | BUK7610-100B | IXKH30N60C5 | PHD3055E



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