XM2N200 PDF and Equivalents Search

 

XM2N200 Specs and Replacement


   Type Designator: XM2N200
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 190 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.54 Ohm
   Package: TO-92
 

 XM2N200 substitution

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XM2N200 datasheet

 ..1. Size:2138K  goford
 xm2n200.pdf pdf_icon

XM2N200

GOFORD XM2N200. D Description The XM2N200.uses advanced trench technology and G design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features S Schematic diagram VDSS RDS(ON) ID @ 10V (typ) 190V 356.6m 2A High density cell design for ultra low Rdson Fully characterized avalanche voltage an... See More ⇒

Detailed specifications: GT130N03D5 , GT15N10S , GT45N06 , GT52N10D5 , GT52N10T , GT55N06 , GT68N12T , GT68N12M , IRLZ44N , DMP3007SPS , DMP3013SFV , DMP3017SFGQ , DMP3036SFV , DMP3098LQ , DMP3125L , DMP32D5SFB , DMP4013LFGQ .

History: NCE65T180V

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 
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