XM2N200 MOSFET. Datasheet pdf. Equivalent
Type Designator: XM2N200
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 3 W
Maximum Drain-Source Voltage |Vds|: 190 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V
Maximum Drain Current |Id|: 2 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 12 nC
Rise Time (tr): 12 nS
Drain-Source Capacitance (Cd): 90 pF
Maximum Drain-Source On-State Resistance (Rds): 0.54 Ohm
Package: TO-92
XM2N200 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
XM2N200 Datasheet (PDF)
0.1. xm2n200.pdf 
Size:2138K _goford
GOFORDXM2N200.DDescription The XM2N200.uses advanced trench technology and Gdesign to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features SSchematic diagram VDSS RDS(ON) ID @10V (typ) 190V 356.6m 2A High density cell design for ultra low Rdson Fully characterized avalanche voltage an
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