DMP6350S Datasheet and Replacement
Type Designator: DMP6350S
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1.17 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 3.8 nS
Cossⓘ - Output Capacitance: 15 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
Package: SOT23
DMP6350S substitution
DMP6350S Datasheet (PDF)
dmp6350s.pdf

DMP6350S 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID Max BVDSS RDS(ON) Max TA = +25C Low Input Capacitance Fast Switching Speed -1.5A 350m @ VGS = -10V Low Input/Output Leakage -60V 550m @ VGS = -4.5V -1.2A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony
Datasheet: DMP4013LFGQ , DMP4065SQ , DMP510DL , DMP6050SFG , DMP610DL , DMP6110SVT , DMP6180SK3Q , DMP6185SEQ , K3569 , DMPH6050SK3 , DMPH6050SK3Q , DMT10H009LCG , DMT10H010LK3 , DMT10H010LSS , DMT10H015LPS , DMT10H015LSS , DMT3002LPS .
History: SWT38N65K2F | UT2301G-AE3-R
Keywords - DMP6350S MOSFET datasheet
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History: SWT38N65K2F | UT2301G-AE3-R



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