DMPH6050SK3Q Specs and Replacement
Type Designator: DMPH6050SK3Q
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 23.6 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8.6 nS
Cossⓘ - Output Capacitance: 87 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
Package: TO252
DMPH6050SK3Q substitution
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DMPH6050SK3Q datasheet
dmph6050sk3.pdf
DMPH6050SK3 Green 60V 175 C P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Rated to +175 Ideal for High Ambient Temperature C ID max BVDSS RDS(ON) max Environments TC = +25 C 100% Unclamped Inductive Switching Ensures More Reliable 50m @ VGS = -10V -23.6A -60V and Robust End Application 70m @ VGS = -4.5V -20A Low Qg ... See More ⇒
Detailed specifications: DMP510DL, DMP6050SFG, DMP610DL, DMP6110SVT, DMP6180SK3Q, DMP6185SEQ, DMP6350S, DMPH6050SK3, 2SK3878, DMT10H009LCG, DMT10H010LK3, DMT10H010LSS, DMT10H015LPS, DMT10H015LSS, DMT3002LPS, DMT3006LFV, DMT3006LPS
Keywords - DMPH6050SK3Q MOSFET specs
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