All MOSFET. DMPH6050SK3Q Datasheet

 

DMPH6050SK3Q MOSFET. Datasheet pdf. Equivalent


   Type Designator: DMPH6050SK3Q
   Marking Code: H6050S
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 23.6 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 25 nC
   trⓘ - Rise Time: 8.6 nS
   Cossⓘ - Output Capacitance: 87 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: TO252

 DMPH6050SK3Q Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

DMPH6050SK3Q Datasheet (PDF)

 ..1. Size:440K  diodes
 dmph6050sk3q.pdf

DMPH6050SK3Q DMPH6050SK3Q

DMPH6050SK3QGreenQ 60V +175C P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID max Rated to +175 Ideal for High Ambient Temperature C BVDSS RDS(ON) max TC = +25C Environments 50m @ VGS = -10V -23.6A 100% Unclamped Inductive Switching Ensures More Reliable -60V 70m @ VGS = -4.5V -20A and Robust End Application Low Qg

 3.1. Size:478K  diodes
 dmph6050sk3.pdf

DMPH6050SK3Q DMPH6050SK3Q

DMPH6050SK3 Green60V 175C P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Rated to +175 Ideal for High Ambient Temperature C ID max BVDSS RDS(ON) max Environments TC = +25C 100% Unclamped Inductive Switching Ensures More Reliable 50m @ VGS = -10V -23.6A -60V and Robust End Application 70m @ VGS = -4.5V -20A Low Qg

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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