DMG8N65SCT Datasheet and Replacement
Type Designator: DMG8N65SCT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 46 nS
Cossⓘ - Output Capacitance: 115 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm
Package: TO220AB
DMG8N65SCT substitution
DMG8N65SCT Datasheet (PDF)
dmg8n65sct.pdf

DMG8N65SCT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low Input Capacitance BVDSS RDS(ON) Package TC = +25C High BVDSS Rating for Power Application TO220AB 650V 1.3@VGS = 10V 8A Low Input/Output Leakage (Type TH) Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description
dmg8n65sct.pdf

isc N-Channel MOSFET Transistor DMG8N65SCTFEATURESDrain Current I = 8.0A@ T =25D CDrain Source Voltage-: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 1.3(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu
Datasheet: DMG10N60SCT , DMG3N60SJ3 , DMG4N60SCT , DMG4N60SJ3 , DMG4N60SK3 , DMG7N65SCT , DMG7N65SCTI , DMG7N65SJ3 , EMB04N03H , DMJ70H1D0SV3 , DMJ70H1D3SH3 , DMJ70H1D4SV3 , DMJ70H1D5SV3 , DMJ70H600SH3 , DMJ70H601SK3 , DMJ70H601SV3 , DMJ70H900HJ3 .
History: FDZ375P | STL70N10F3 | 2SK538 | 2SK3541MGP | SFS12R08PNF | NTHS4101PT1G
Keywords - DMG8N65SCT MOSFET datasheet
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History: FDZ375P | STL70N10F3 | 2SK538 | 2SK3541MGP | SFS12R08PNF | NTHS4101PT1G



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