DMG8N65SCT MOSFET Datasheet: N-Ch, 650V, 8A. Full specification with pinout and replacement list

DMG8N65SCT Specs and Replacement

Type Designator: DMG8N65SCT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 46 nS

Cossⓘ - Output Capacitance: 115 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm

Package: TO220AB

DMG8N65SCT substitution

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DMG8N65SCT datasheet

..1. Size:450K diodes
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DMG8N65SCT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low Input Capacitance BVDSS RDS(ON) Package TC = +25 C High BVDSS Rating for Power Application TO220AB 650V 1.3 @VGS = 10V 8A Low Input/Output Leakage (Type TH) Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description... See More ⇒

..2. Size:261K inchange semiconductor
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isc N-Channel MOSFET Transistor DMG8N65SCT FEATURES Drain Current I = 8.0A@ T =25 D C Drain Source Voltage- V = 650V(Min) DSS Static Drain-Source On-Resistance R = 1.3 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pu... See More ⇒

Detailed specifications: DMG10N60SCT, DMG3N60SJ3, DMG4N60SCT, DMG4N60SJ3, DMG4N60SK3, DMG7N65SCT, DMG7N65SCTI, DMG7N65SJ3, IRLB3034, DMJ70H1D0SV3, DMJ70H1D3SH3, DMJ70H1D4SV3, DMJ70H1D5SV3, DMJ70H600SH3, DMJ70H601SK3, DMJ70H601SV3, DMJ70H900HJ3