All MOSFET. DMG8N65SCT Datasheet

 

DMG8N65SCT MOSFET. Datasheet pdf. Equivalent


   Type Designator: DMG8N65SCT
   Marking Code: 8N65SCT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 30 nC
   trⓘ - Rise Time: 46 nS
   Cossⓘ - Output Capacitance: 115 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm
   Package: TO220AB

 DMG8N65SCT Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

DMG8N65SCT Datasheet (PDF)

 ..1. Size:450K  diodes
dmg8n65sct.pdf

DMG8N65SCT
DMG8N65SCT

DMG8N65SCT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low Input Capacitance BVDSS RDS(ON) Package TC = +25C High BVDSS Rating for Power Application TO220AB 650V 1.3@VGS = 10V 8A Low Input/Output Leakage (Type TH) Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description

 ..2. Size:261K  inchange semiconductor
dmg8n65sct.pdf

DMG8N65SCT
DMG8N65SCT

isc N-Channel MOSFET Transistor DMG8N65SCTFEATURESDrain Current I = 8.0A@ T =25D CDrain Source Voltage-: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 1.3(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: 14N50L-TQ2-R | SVS60R190SD4

 

 
Back to Top